Spontaneous and Stimulated Carrier Lifetime (77°K) in a High-Purity, Surface-Free GaAs Epitaxial Layer von Dapkus, P. D., Holonyak, N., Burnham, R. D., Keune, D. L., Burd, J. W., Lawley, K. L., Walline, R. E.

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TIME BEHAVIOR OF EXCITON FORMATION AND LASER EMISSION IN Cd(SeS) PLATELETS von Keune, D. L., Rossi, J. A., Gaddy, O. L., Merkelo, H., Holonyak, N.

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High-Efficiency Zn-Diffused GaAs Electroluminescent Diodes von Herzog, A.H., Keune, D.L., Craford, M.G.

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Threshold Requirements and Carrier Interaction Effects in GaAs Platelet Lasers (77°K) von Rossi, J. A., Keune, D. L., Holonyak, N., Dapkus, P. D., Burnham, R. D.

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IIIb-5.5 liquid phase epitaxial InGaPAs multilayered heterojunction lasers exhibiting "Quantum size effects" (late paper) von Rezek, E.A., Holonyak, N., Vojak, B.A., Stillman, G.E., Rossi, J.A., Keune, D.L., Fairing, J.D.

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Continuous room-temperature photopumped laser operation of visible-spectrum LPE In1-xGaxP1-zAsz(λ ~ 6700 Å) von Kirchoefer, S., Rezek, E., Vojak, B., Holonyak, N., Finn, D., Keune, D., Rossi, J.

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Characteristics and potential applications of GaAs1-xPx MIS structures von Forbes, L., Yeargan, J.R., Keune, D.L., Craford, M.G.

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DIRECT OBSERVATION OF A DYNAMIC BURSTEIN SHIFT IN A GaAs:Ge PLATELET LASER von Dapkus, P. D., Holonyak, N., Burnham, R. D., Keune, D. L.

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SPONTANEOUS AND STIMULATED CARRIER LIFETIME AND THE SPECTRAL OUTPUT OF CdSe (77°K) von Keune, D. L., Holonyak, N., Dapkus, P. D., Burnham, R. D.

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Monolithic GaP green-emitting LED matrix-addressable arrays von Keune, D.L., Craford, M.G., Groves, W.O., Johnson, A.D.

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Gallium phosphide high-temperature electroluminescent p-n-p-n switches and controlled rectifiers von Keune, D.L., Craford, M.G., Herzog, A.H., Fitzpatrick, B.J.

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Photosensitive Impurity-Assisted Tunneling (Au, 77°K) IN GaAs Tunnel Diodes von Holonyak, N., Keune, D. L., Burnham, R. D., Duke, C. B.

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GaAs junction lasers containing the amphoteric dopants Ge and Si von Burnham, R.D., Dapkus, P.D., Holonyak, N., Keune, D.L., Zwicker, H.R.

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Optical phase shift measurement of carrier decay-time on thin semiconductor samples with surface losses von Zwicker, H.R., Keune, D.L., Holonyak, N., Burnham, R.D.

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Near-Bandgap, Narrow-Spectrum, Low-Loss, Volume-Excited GaAs Laser (77°K) with Time-Uniform Output von Dapkus, P. D., Holonyak, N., Keune, D. L., Burnham, R. D.

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Stimulated Emission in Lossy Semiconductor Laser Modes von Keune, D. L., Holonyak, N., Dapkus, P. D., Burnham, R. D.

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Time Behavior of Laser Modes in GaAs Platelet Lasers von Keune, D. L., Rossi, J. A., Holonyak, N., Dapkus, P. D.

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THIN SEMICONDUCTOR LASER TO THIN PLATELET OPTICAL COUPLER von Keune, D. L., Holonyak, N., Burnham, R. D., Dapkus, P. D., Dupuis, R. D.

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Laser Operation and Spectroscopy of Epitaxial GaAs Gunn Oscillator Wafers von Holonyak, N., Keune, D. L., Rossi, J. A., Lawley, K. L., Walline, R. E., Williams, F. V.

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High transparency of thin platelet semiconductor lasers von Holonyak, N., Johnson, M., Keune, D.

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