Initial stage of aluminum nitride film growth on 6H-silicon carbide by plasma-assisted, gas-source molecular beam epitaxy von Tanaka, Satoru, Kern, R. Scott, Davis, Robert F.

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Defect formation during hetero-epitaxial growth of aluminium nitride thin films on 6H-silicon carbide by gas-source molecular beam epitaxy von TANAKA, S, KERN, R. S, BENTLEY, J, DAVIS, R. F

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III–V Nitride semiconductors for high-performance blue and green light-emitting devices von Steigerwald, Daniel, Rudaz, Serge, Liu, Heng, Kern, R. Scott, Götz, Werner, Fletcher, Robert

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Chemical Vapor Cleaning of 6H‐SiC Surfaces von King, Sean W., Kern, R. Scott, Benjamin, Mark C., Barnak, John P., Nemanich, Robert J., Davis, Robert F.

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Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy von Tanaka, Satoru, Kern, R. Scott, Davis, Robert F.

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SEMICONDUCTOR DEVICES WITH SELECTIVELY DOPED III-V NITRIDE LAYERS von KERN, R. Scott, GOETZ, Werner

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Chemical vapor cleaning of 6H-SiC surfaces von KING, S. W, KERN, R. S, BENJAMIN, M. C, BARNAK, J. P, NEMANICH, R. J, DAVI, R. F

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Vicinal and on-axis surfaces of 6H-SiC(0001) thin films observed by scanning tunneling microscopy von Tanaka, Satoru, Kern, R.Scott, Davis, Robert F., Wendelken, John F., Xu, Jun

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Microstructural evolution and defect formation during the initial stages of the growth of silicon carbide and aluminum nitride on α(6H)-SiC(0001) substrates von Davis, Robert F., Tanaka, Satoru, Kern, R.Scott

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Light-Emitting Diodes in Automotive Forward Lighting Applications: Materials Engineering Solutions to Fundamental Challenges von Kern, R Scott

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DECORATIVE PVD COATED ARTICLE AND RADOME AND METHOD OF MAKING SAME von FIELD SIMON DAVID, BELCHER SIMON, KERN SCOTT R, EDWARDS, SCOTT, SIMMONDS TIMOTHY, HERRMANN ANDREAS, STOLL BERND, CARUSO, DANIELE

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Light-Emitting Diodes in Automotive Forward Lighting Applications: Materials Engineering Solutions to Fundamental Challenges von Kern, R. Scott

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Light-emitting diodes in automotive forward lighting applications : Materials engineering solutions to fundamental challenges: Journal of materials and manufacturing von KERN, R. Scott

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First surface or second surface decorative radar radome von FIELD SIMON DAVID, BELCHER SIMON, KERN SCOTT R, SIMMONDS TIMOTHY, HERRMANN ANDREAS, STOLL BERND, SCOTT ERIC, CARUSO, DANIELE

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Formation of ohmic contats in III-Nitride light emitting devices von Chen, Changhua, Christenson, Gina L, Kern, Scott R, Martin, Paul S, Goetz, Werner, Steigerwald, Daniel A, Kuo, Chihping, D.Camras, Michael

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Licht emittierende III-Nitrid-Anordnung und Verfahren zu deren Herstellung von Goetz, Werner K, Stockman, Stephen A, Kern, Scott R, Kim, Andrew Y, Gardner, Nathan F, Camras, Michael D

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Methods and arrangements for dynamically active processors von ALMEIDA JASON R.,DUNHAM SCOTT N.,KERN ERIC R.,SCHWARTZ WILLIAM B.,SODERLUND ADAM L

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Semiconductor devices with selectively doped III-V nitride layers von KERN R. SCOTT, GOETZ WERNER

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Semiconductor devices with selectively doped III-V nitride layers von Goetz, Werner, Kern, R. Scott

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SEMICONDUCTOR DEVICES WITH SELECTIVELY DOPED III-V NITRIDE LAYERS von GOETZ, WERNER, KERN, R. SCOTT

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