Optical spectroscopy study of damage induced in 4H-SiC by swift heavy ion irradiation von Sorieul, S, Kerbiriou, X, Costantini, J-M, Gosmain, L, Calas, G, Trautmann, C

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Ion-beam modifications of mechanical and dimensional properties of silicon carbide von Costantini, Jean-Marc, Kerbiriou, Xavier, Sauzay, Maxime, Thomé, Lionel

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Silicon displacement threshold energy determined by electron paramagnetic resonance and positron annihilation spectroscopy in cubic and hexagonal polytypes of silicon carbide von Kerbiriou, X., Barthe, M.-F., Esnouf, S., Desgardin, P., Blondiaux, G., Petite, G.

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Amorphization and dynamic annealing of hexagonal SiC upon heavy-ion irradiation: Effects on swelling and mechanical properties von Kerbiriou, Xavier, Costantini, Jean-Marc, Sauzay, Maxime, Sorieul, Stéphanie, Thomé, Lionel, Jagielski, Jacek, Grob, Jean-Jacques

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Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance von Blondiaux, G., Desgardin, P., Petite, G., Barthe, Marie France, Kerbiriou, X., Esnouf, S.

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Thermal evolution of vacancy defects induced in 12 MeV H+ irradiated 6H-SiC single crystals von Kerbiriou, X., Barthe, M.-F., Gentils, A., Desgardin, P.

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Characterization of 3C-SiC Monocrystals Using Positron Annihilation Spectroscopy von Blondiaux, G., Desgardin, P., Greddé, A., Barthe, Marie France, Kerbiriou, X.

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Vacancy defects induced in the track region of 132MeV 12C irradiated SiC von Kerbiriou, X., Barthe, M.F., Esnouf, S., Desgardin, P., Blondiaux, G., Balanzat, E.

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