Standards for the Characterization of Endurance in Resistive Switching Devices von Lanza, Mario, Waser, Rainer, Ielmini, Daniele, Yang, J. Joshua, Goux, Ludovic, Suñe, Jordi, Kenyon, Anthony Joseph, Mehonic, Adnan, Spiga, Sabina, Rana, Vikas, Wiefels, Stefan, Menzel, Stephan, Valov, Ilia, Villena, Marco A, Miranda, Enrique, Jing, Xu, Campabadal, Francesca, Gonzalez, Mireia B, Aguirre, Fernando, Palumbo, Felix, Zhu, Kaichen, Roldan, Juan Bautista, Puglisi, Francesco Maria, Larcher, Luca, Hou, Tuo-Hung, Prodromakis, Themis, Yang, Yuchao, Huang, Peng, Wan, Tianqing, Chai, Yang, Pey, Kin Leong, Raghavan, Nagarajan, Dueñas, Salvador, Wang, Tao, Xia, Qiangfei, Pazos, Sebastian

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Resistance Switching in Individual Hydrogen Silsesquioxane (HSQ) Nanopillars von Ng, Wing Hung, Buckwell, Mark, Mehonic, Adnan, Kenyon, Anthony Joseph

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Conductive AFM Topography of Intrinsic Conductivity Variations in Silica Based Dielectrics for Memory Applications von Buckwell, Mark, Zarudnyi, Konstantin, Montesi, Luca, Ng, Wing Hung, Hudziak, Stephen, Mehonic, Adnan, Kenyon, Anthony Joseph

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Artificial Dendritic Computation: The case for dendrites in neuromorphic circuits von Mannion, Daniel John, Kenyon, Anthony Joseph

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Artificial Dendritic Computation: The case for dendrites in neuromorphic circuits von Mannion, Daniel John, Kenyon, Anthony Joseph

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OXIDE MEMORY RESISTOR INCLUDING SEMICONDUCTOR NANOPARTICLES von MEHONIC, Adnan, KENYON, Anthony Joseph

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Oxide memory resistor including semiconductor nanoparticles von Kenyon, Anthony Joseph, Mehonic, Adnan

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Nanoscale plasticity and neuromorphic dynamics in silicon suboxide RRAM von Buckwell, Mark, Ng, Wing Hung, Mannion, Daniel John, Hudziak, Stephen, Mehonic, Adnan, Kenyon, Anthony Joseph

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Resistance Switching in Individual Hydrogen Silsesquioxane (HSQ) Nanopillars von Ng, Wing Hung, Buckwell, Mark, Mehonic, Adnan, Kenyon, Anthony Joseph

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Nanoscale plasticity and neuromorphic dynamics in silicon suboxide RRAM von Buckwell, Mark, Ng, Wing Hung, Mannion, Daniel John, Hudziak, Stephen, Mehonic, Adnan, Kenyon, Anthony Joseph

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Tomography of Intrinsic Filamentation in Silica and Hsq Based Reram Devices with Conductive Atomic Force Microscopy von Buckwell, Mark, Zarudnyi, Konstantin, Montesi, Luca, Ng, Wing Hung, Hudziak, Stephen, Mehonic, Adnan, Kenyon, Anthony Joseph

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Nanosecond Programming of SiO x Based Resistive RAM: Simplified Digital Programmers and Analog Neuromorphic Type Behavior von Montesi, Luca, Buckwell, Mark, Zarudnyi, Konstantin, Garnett, Leon, Hudziak, Steven, Mehonic, Adnan, Kenyon, Anthony Joseph

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Resistance Switching Structures Based on Hydrogen Silsesquioxane (HSQ) Thin Films von Ng, Wing Hung, Mehonic, Adnan, Montesi, Luca, Buckwell, Mark, Kenyon, Anthony Joseph

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Conductive AFM Topography of Intrinsic Conductivity Variations in Silica Based Dielectrics for Memory Applications von Buckwell, Mark, Zarudnyi, Konstantin, Montesi, Luca, Ng, Wing Hung, Hudziak, Stephen, Mehonic, Adnan, Kenyon, Anthony Joseph

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OXIDE MEMORY RESISTOR INCLUDING SEMICONDUCTOR NANOPARTICLES von KENYON ANTHONY JOSEPH, MEHONIC ADNAN

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OXIDE MEMORY RESISTOR INCLUDING SEMICONDUCTOR NANOPARTICLES von KENYON, ANTHONY JOSEPH, MEHONIC, ADNAN

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(Invited) Resistance Switching in Silicon-Rich Silica: Electronic, Structural and Photonic Perspectives von Kenyon, Anthony Joseph, Mehonic, Adnan, Munde, Manveer, Ng, Wing Hung, Buckwell, Mark, Montesi, Luca, Zarudnyi, Konstantin, Bosman, Michel, Gerard, Thomas, Shluger, Alex L

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Silicon Oxide Reram Device von Mehonic, Adnan, Buckwell, Mark, Montesi, Luca, Munde, Manveer, Chater, Richard John, McPhail, David S, Bosman, Michel, Kenyon, Anthony Joseph

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OXIDE MEMORY RESISTOR INCLUDING SEMICONDUCTOR NANOPARTICLES von KENYON, ANTHONY JOSEPH, MEHONIC, ADNAN

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The Interaction of SiO x -Based Resistive RAM Devices with Oxygen: Observations on Release and Absorption von Montesi, Luca, Buckwell, Mark, van den Bosch, Celeste Anna Maria, Chater, Richard John, Fearn, Sarah, Mehonic, Adnan, Aguadero, Ainara, Kenyon, Anthony Joseph

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