Sub-band gap infrared absorption in Si implanted with Mg von Wang, Mao, Shaikh, M S, Kentsch, U, Heller, R, Zhou, Shengqiang

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Charge transport in n-type As- and Sb-hyperdoped Ge von Wang, Mao, Shaikh, M. S., Li, Yi, Prucnal, S., Zuk, J., Turek, M., Drozdziel, A., Pyszniak, K., Rebohle, L., Kentsch, U., Helm, M., Zhou, Shengqiang

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Si1−x−yGeySnx alloy formation by Sn ion implantation and flash lamp annealing von Steuer, O., Michailow, M., Hübner, R., Pyszniak, K., Turek, M., Kentsch, U., Ganss, F., Khan, M. M., Rebohle, L., Zhou, S., Knoch, J., Helm, M., Cuniberti, G., Georgiev, Y. M., Prucnal, S.

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Approaching the Curie temperature of ferromagnetic (Ga,Mn)P prepared by ion implantation and pulsed laser melting von Tian, Mingyang, Yang, Qingyun, Yuan, Ye, Kentsch, U., Liu, Ke, Tang, Mingjun, Xie, Zhengwei, Li, Ling, Wang, Mao

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Depth selective magnetic phase coexistence in FeRh thin films von Griggs, W., Eggert, B., Liedke, M. O., Butterling, M., Wagner, A., Kentsch, U., Hirschmann, E., Grimes, M., Caruana, A. J., Kinane, C., Wende, H., Bali, R., Thomson, T.

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Chromium agglomeration induced by Fe+ ion irradiation of Fe-10at%Cr von Pantousa, S., London, A.J., Mergia, K., Ionescu, A., Manios, E., Tsavalas, P., Dellis, S., Kinane, C., Langridge, S., Caruana, A., Kentsch, U., Messoloras, S.

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Permanent magnet electron beam ion source/trap systems with bakeable magnets for improved operation conditions von Schmidt, M, Zschornack, G, Kentsch, U, Ritter, E

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Fe+ ion irradiation effects in Fe-10at%Cr films irradiated at 300 °C von Pantousa, S., Mergia, K., Ionescu, A., Manios, E., Dellis, S., Kinane, C., Langridge, S., Caruana, A., Kentsch, U., Messoloras, S.

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Guiding of Argon ions through PET nano capillary foils von Kreller, M, Zschornack, G, Kentsch, U

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Short time ion pulse extraction from the Dresden electron beam ion trap von Kentsch, U., Zschornack, G., Schwan, A., Ullmann, F.

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Compact electron beam ion sources/traps: Review and prospects (invited) von Zschornack, G., Kreller, M., Ovsyannikov, V. P., Grossman, F., Kentsch, U., Schmidt, M., Ullmann, F., Heller, R.

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Design and production of tungsten-carbide rich coating layers von Racz, A.S., Fogarassy, Z., Kentsch, U., Panjan, P., Menyhard, M.

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The catalytic, sensory and electrical properties of GO, PI and PLLA implanted by low-energy copper ions von Novak, J., Stepanovska, E., Malinsky, P., Mazanek, V., Sofer, Z., Kentsch, U., Mackova, A.

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Tunable magneto-transport properties in ultra-high Bi-doped Si prepared by liquid phase epitaxy von Wang, Mao, Liu, Hang, Shaikh, M.S., Heller, R., Kentsch, U., Li, Ling, Zhou, Shengqiang

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Status report of the Dresden EBIS/EBIT developments von Zschornack, G., Grossmann, F., Kentsch, U., Ovsyannikov, V. P., Ritter, E., Schmidt, M., Thorn, A., Ullmann, F.

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Achieving ultralow contact resistivity in Si via Te hyperdoping and millisecond post-metallization annealing von Liu, Hang, Zhou, Yunxia, Shaikh, M.S., Huang, Yijia, Zhu, Jianqi, Heller, R., Kentsch, U., Li, Ling, Tian, Mingyang, Zhou, Shengqiang, Wang, Mao

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Combined Au/Ag nanoparticle creation in ZnO nanopillars by ion implantation for optical response modulation and photocatalysis von Macková, A., Jagerová, A., Lalik, O., Mikšová, R., Poustka, D., Mistrík, J., Holý, V., Schutter, J.D., Kentsch, U., Marvan, P., Azarov, A., Galeckas, A.

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Si1− x − y Ge y Sn x alloy formation by Sn ion implantation and flash lamp annealing von Steuer, O., Michailow, M., Hübner, R., Pyszniak, K., Turek, M., Kentsch, U., Ganss, F., Khan, M. M., Rebohle, L., Zhou, S., Knoch, J., Helm, M., Cuniberti, G., Georgiev, Y. M., Prucnal, S.

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Molecule fragmentation at the Dresden EBIS-A von Kreller, M., Zschornack, G., Kentsch, U., Heller, R.

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Depth-distribution of resistivity within ion-irradiated semiconductor layers revealed by low-kV scanning electron microscopy von Jóźwik, I., Jagielski, J., Ciepielewski, P., Dumiszewska, E., Piętak-Jurczak, K., Kamiński, M., Kentsch, U.

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