Hochschulen als Partner der nachhaltigen Regionalentwicklung von Engel, Dirk, Zdrowomyslaw, Norbert, Kentsch, Fabian

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Topological Hall Effect in Single Thick SrRuO3 Layers Induced by Defect Engineering von Wang, Changan, Chang, Ching‐Hao, Herklotz, Andreas, Chen, Chao, Ganss, Fabian, Kentsch, Ulrich, Chen, Deyang, Gao, Xingsen, Zeng, Yu‐Jia, Hellwig, Olav, Helm, Manfred, Gemming, Sibylle, Chu, Ying‐Hao, Zhou, Shengqiang

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Modifying vacancy defects during systematic disordering of the Cr2AlC nano-lamellar system von Cabaço, João S., Liedke, Maciej Oskar, Pablo-Navarro, Javier, Ganss, Fabian, Magén, César, Ricardo Ibarra, Manuel, Kentsch, Ulrich, Butterling, Maik, Wagner, Andreas, Lindner, Jürgen, Faßbender, Jürgen, Leyens, Christoph, Boucher, Richard, Bali, Rantej

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Topological Hall Effect in Single Thick SrRuO 3 Layers Induced by Defect Engineering von Wang, Changan, Chang, Ching‐Hao, Herklotz, Andreas, Chen, Chao, Ganss, Fabian, Kentsch, Ulrich, Chen, Deyang, Gao, Xingsen, Zeng, Yu‐Jia, Hellwig, Olav, Helm, Manfred, Gemming, Sibylle, Chu, Ying‐Hao, Zhou, Shengqiang

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Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing von Steuer, Oliver, Michailow, Michail, Hübner, René, Pyszniak, Krzysztof, Turek, Marcin, Kentsch, Ulrich, Ganss, Fabian, Khan, Muhammad Moazzam, Rebohle, Lars, Zhou, Shengqiang, Knoch, Joachim, Helm, Manfred, Cuniberti, Gianaurelio, Georgiev, Yordan M, Prucnal, Slawomir

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Supplemental Material von Steuer, Oliver, Michailow, Michail, Hübner, R., Pyszniak, Krzysztof, Turek, Marcin, Kentsch, Ulrich, Ganss, Fabian, Khan, Muhammad, Rebohle, Lars, Zhou, Shengqiang, Knoch, Joachim, Helm, Manfred, Cuniberti, Gianaurelio, Georgiev, Yordan, Prucnal, Slawomir

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Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing von Steuer, Oliver, Michailow, Michail, Hübner, René, Pyszniak, Krzysztof, Turek, Marcin, Kentsch, Ulrich, Ganss, Fabian, Muhammad Moazzam Khan, Rebohle, Lars, Zhou, Shengqiang, Knoch, Joachim, Helm, Manfred, Cuniberti, Gianaurelio, Georgiev, Yordan M, Prucnal, Slawomir

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Topological Hall effect in single thick SrRuO3 layers induced by defect engineering von Wang, Changan, Ching-Hao, Chang, Herklotz, Andreas, Chen, Chao, Ganss, Fabian, Kentsch, Ulrich, Chen, Deyang, Gao, Xingsen, Yu-Jia, Zeng, Hellwig, Olav, Helm, Manfred, Gemming, Sibylle, Ying-Hao, Chu, Zhou, Shengqiang

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