Oxide-based selector with trap-filling-controlled threshold switching von Saitoh, Shuhei, Kinoshita, Kentaro

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Reservoir computing with dielectric relaxation at an electrode–ionic liquid interface von Koh, Sang-Gyu, Shima, Hisashi, Naitoh, Yasuhisa, Akinaga, Hiroyuki, Kinoshita, Kentaro

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A time-delayed physical reservoir with various time constants von Yamazaki, Yutaro, Kinoshita, Kentaro

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Photonic Physical Reservoir Computing with Tunable Relaxation Time Constant von Yamazaki, Yutaro, Kinoshita, Kentaro

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Controlling filament growth mode in resistive random-access memory based on thermal flow von Sasaki, Yuta, Kinoshita, Kentaro

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Direct observation of oxygen movement during resistance switching in NiO/Pt film von Yoshida, Chikako, Kinoshita, Kentaro, Yamasaki, Takahiro, Sugiyama, Yoshihiro

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Structural Strengthening of Metal–Organic Frameworks Owing to the Confinement Effect of Ionic Liquids in the Nanopores von Koh, Sang-Gyu, Koide, Taiki, Arai, Asahi, Ohira, Ichiro, Kinoshita, Kentaro

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Dynamic Nonlinear Behavior of Ionic Liquid-Based Reservoir Computing Devices von Matsuo, Takuma, Sato, Dan, Koh, Sang-Gyu, Shima, Hisashi, Naitoh, Yasuhisa, Akinaga, Hiroyuki, Itoh, Toshiyuki, Nokami, Toshiki, Kobayashi, Masakazu, Kinoshita, Kentaro

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Efficient Collection of Oil Microdroplets by Hyperbranched, Space‐Filling Open Microfluidic Channels von Segawa, Yusho, Kinoshita, Kentaro, Kai, Hiroyuki

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Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model von Sato, Yoshihiro, Kinoshita, Kentaro, Aoki, Masaki, Sugiyama, Yoshihiro

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(Invited) Improving Memory Performance of Cu/HfO2/Pt Conducting-Bridge RAM by Solvent Substitution von Kinoshita, Kentaro

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Ionic liquid-loaded metal-organic framework system for nanoionic device applications von Koh, Sang-Gyu, Koide, Taiki, Morita, Takumi, Kinoshita, Kentaro

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Significantly Improved Performance of a Conducting-bridge Random Access Memory (CB-RAM) Device Using Copper-containing Glyme Salt von Yamaoka, Hiroki, Yamashita, Takuya, Harada, Akinori, Sakaguchi, Atsushi, Kinoshita, Kentaro, Kishida, Satoru, Hayase, Shuichi, Nokami, Toshiki, Itoh, Toshiyuki

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Quantitative Relationship Between Data Dimensionality and Information Processing Capability Revealed via Principal Component Analysis for Non-Linear Current Waveforms With Non-Idea... von Kubo, Yuki, Yonezawa, Masaharu, Shima, Hisashi, Naitoh, Yasuhisa, Akinaga, Hiroyuki, Nokami, Toshiki, Itoh, Toshiyuki, Kinoshita, Kentaro

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Repeatable and reproducible formation/rupture of oxygen vacancy filaments in the vicinity of a polycrystalline HfO2 surface von Hida, Sota, Morita, Takumi, Yamasaki, Takahiro, Nara, Jun, Ohno, Takahisa, Kinoshita, Kentaro

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Operando observation of resistive switching in a resistive random-access memory by laser-excited photoemission electron microscope von Okuda, Yuji, Kawakita, Junpei, Taniuchi, Toshiyuki, Shima, Hisashi, Shimizu, Atsushi, Naitoh, Yasuhisa, Kinoshita, Kentaro, Akinaga, Hiro, Shin, Shik

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Resistive switching by migration of hydrogen ions von Hanada, Akihiro, Kinoshita, Kentaro, Kishida, Satoru

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Liquid-Solid Hybrid Memory Device Achieved by Unique Features of Ionic Liquids von Sato, Hiroshi, Shima, Hisashi, Honma, Yusei, Naitoh, Yasuhisa, Akinaga, Hiroyuki, Nokami, Toshiki, Itoh, Toshiyuki, Kinoshita, Kentaro

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Temperature Driven Current-Voltage Characteristics of Ionic Liquid Type Intelligent Connection Device von Kobayashi, Masakazu, Orii, Yasumitsu, Shima, Hisashi, Naitoh, Yasuhisa, Akinaga, Hiroyuki, Sato, Dan, Matsuo, Takuma, Kinoshita, Kentaro, Nokami, Toshiki, Itoh, Toshiyuki

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Copper Ion-containing Ionic Liquids Provide Improved Endurance and Switching Voltage Distributions of Conducting-bridge Random Access Memory von Harada, Akinori, Yamaoka, Hiroki, Watanabe, Kouhei, Kinoshita, Kentaro, Kishida, Satoru, Fukaya, Yukinobu, Nokami, Toshiki, Itoh, Toshiyuki

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