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    Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology

    Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology von Borland, John O, Sugitani, Michiro, Oesterlin, Peter, Johnson, Walt, Buyuklimanli, Temel, Hengstebeck, Robert, Kennon, Ethan, Jones, Kevin Scott, Joshi, Abhijeet


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    Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology

    Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology von Borland, John O, Sugitani, Michiro, Oesterlin, Peter, Johnson, Walt, Buyuklimanli, Temel, Hengstebeck, Robert, Kennon, Ethan, Jones, Kevin Scott, Joshi, Abhijeet


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