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  1. 1
    Effect of Strain in Channel on Electron Transport Properties of Ga1−xInxSb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer

    Effect of Strain in Channel on Electron Transport Properties of Ga1−xInxSb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer... von Endoh, Akira, Hatori, Koharu, Kishimoto, Naoyuki, Hiraoka, Mizuho, Kemmochi, Yuta, Endoh, Yuki, Osawa, Koki, Hayashi, Takuya, Machida, Ryuto, Watanabe, Issei, Yamashita, Yoshimi, Hara, Shinsuke, Kasamatsu, Akifumi, Fujishiro, Hiroki I


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  2. 2
    Effect of Strain in Channel on Electron Transport Properties of Ga 1− x In x Sb High Electron Mobility Transistor Structures with Strained‐Al 0.40 In 0.60 Sb/Al 0.25 In 0.75 Sb Stepped Buffer

    Effect of Strain in Channel on Electron Transport Properties of Ga 1− x In x Sb High Electron Mobility Transistor Structures with Strained‐Al 0.40 In 0.60 Sb/Al 0.25 In 0.75 Sb Ste... von Endoh, Akira, Hatori, Koharu, Kishimoto, Naoyuki, Hiraoka, Mizuho, Kemmochi, Yuta, Endoh, Yuki, Osawa, Koki, Hayashi, Takuya, Machida, Ryuto, Watanabe, Issei, Yamashita, Yoshimi, Hara, Shinsuke, Kasamatsu, Akifumi, Fujishiro, Hiroki I.


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  3. 3
    Effect of Strain in Channel on Electron Transport Properties of Ga1−x In x Sb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer

    Effect of Strain in Channel on Electron Transport Properties of Ga1−x In x Sb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffe... von Endoh, Akira, Hatori, Koharu, Kishimoto, Naoyuki, Hiraoka, Mizuho, Kemmochi, Yuta, Endoh, Yuki, Osawa, Koki, Hayashi, Takuya, Machida, Ryuto, Watanabe, Issei, Yamashita, Yoshimi, Hara, Shinsuke, Kasamatsu, Akifumi, Fujishiro, Hiroki I.


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  4. 4
    APPLICATION CREATION SUPPORT DEVICE AND APPLICATION CREATION SUPPORT METHOD

    APPLICATION CREATION SUPPORT DEVICE AND APPLICATION CREATION SUPPORT METHOD von NAKANISHI YUTA, KEMMOCHI YUICHI

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  5. 5
    CARRYING DEVICE

    CARRYING DEVICE von WATANABE MASAHIRO, KEMMOCHI YUTO, ABE KAZUKI, KONYO MASASHI, TAKAHASHI YUTA, TADAKUMA KENJIRO, TAKAHASHI KAGETORA, TADOKORO SATOSHI

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  6. 6
    High frequency circuit, high frequency circuit component, and communication apparatus

    High frequency circuit, high frequency circuit component, and communication apparatus von SUGIYAMA YUTA, KEMMOCHI SHIGERU, SATAKE HIROTAKA, FUKAMACHI KEISUKE

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  7. 7
    HIGH FREQUENCY CIRCUIT, HIGH FREQUENCY CIRCUIT COMPONENT, AND COMMUNICATION APPARATUS

    HIGH FREQUENCY CIRCUIT, HIGH FREQUENCY CIRCUIT COMPONENT, AND COMMUNICATION APPARATUS von SUGIYAMA YUTA, KEMMOCHI SHIGERU, SATAKE HIROTAKA, FUKAMACHI KEISUKE

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  8. 8
    HIGH FREQUENCY CIRCUIT, HIGH FREQUENCY CIRCUIT COMPONENT, AND COMMUNICATION APPARATUS

    HIGH FREQUENCY CIRCUIT, HIGH FREQUENCY CIRCUIT COMPONENT, AND COMMUNICATION APPARATUS von SUGIYAMA YUTA, KEMMOCHI SHIGERU, SATAKE HIROTAKA, FUKAMACHI KEISUKE

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  9. 9
    HIGH FREQUENCY CIRCUIT, HIGH FREQUENCY CIRCUIT COMPONENT, AND COMMUNICATION APPARATUS

    HIGH FREQUENCY CIRCUIT, HIGH FREQUENCY CIRCUIT COMPONENT, AND COMMUNICATION APPARATUS von KEMMOCHI, SHIGERU, SATAKE, HIROTAKA, FUKAMACHI, KEISUKE, SUGIYAMA, YUTA

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