Implementing and Evaluating an Heterogeneous, Scalable, Tridiagonal Linear System Solver with OpenCL to Target FPGAs, GPUs, and CPUs von Macintosh, Hamish J., Kelson, Neil A., Banks, Jasmine E.

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Note on similarity solutions for viscous flow over an impermeable and non-linearly (quadratic) stretching sheet von Kelson, Neil A.

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Pressure Filtration of Australian Bagasse Pulp von Rainey, Thomas J., Doherty, William O. S., Martinez, D. Mark, Brown, Richard J., Kelson, Neil A.

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Novel Method to Capture and Analyze Flow in a Gross Pollutant Trap Using Image-Based Vector Visualization von Madhani, Jehangir T, Young, Joseph, Kelson, Neil A, Brown, Richard J

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Comparison of High Level FPGA Hardware Design for Solving Tri-diagonal Linear Systems von Warne, David J., Kelson, Neil A., Hayward, Ross F.

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An Efficient Algorithm for the Detection of Eden von Warne, David J., Hayward, Ross F., Kelson, Neil A., Mallet, Dann G.

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beta -Ga2O3 MOSFETs for Radio Frequency Operation von Green, Andrew Joseph, Chabak, Kelson D., Baldini, Michele, Moser, Neil, Gilbert, Ryan, Fitch, Robert C., Wagner, Gunter, Galazka, Zbigniew, Mccandless, Jonathan, Crespo, Antonio, Leedy, Kevin, Jessen, Gregg H.

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Donors and deep acceptors in β-Ga2O3 von Neal, Adam T., Mou, Shin, Rafique, Subrina, Zhao, Hongping, Ahmadi, Elaheh, Speck, James S., Stevens, Kevin T., Blevins, John D., Thomson, Darren B., Moser, Neil, Chabak, Kelson D., Jessen, Gregg H.

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Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition von Leedy, Kevin D., Chabak, Kelson D., Vasilyev, Vladimir, Look, David C., Boeckl, John J., Brown, Jeff L., Tetlak, Stephen E., Green, Andrew J., Moser, Neil A., Crespo, Antonio, Thomson, Darren B., Fitch, Robert C., McCandless, Jonathan P., Jessen, Gregg H.

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Toward high voltage radio frequency devices in β-Ga2O3 von Moser, Neil, Liddy, Kyle, Islam, Ahmad, Miller, Nicholas, Leedy, Kevin, Asel, Thaddeus, Mou, Shin, Green, Andrew, Chabak, Kelson

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High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge von Moser, Neil A., McCandless, Jonathan P., Crespo, Antonio, Leedy, Kevin D., Green, Andrew J., Heller, Eric R., Chabak, Kelson D., Peixoto, Nathalia, Jessen, Gregg H.

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FPGA Implementation of an Evolutionary Algorithm for Autonomous Unmanned Aerial Vehicle On-Board Path Planning von Kok, J., Gonzalez, L. F., Kelson, N.

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Lateral β-Ga2O3 field effect transistors von Chabak, Kelson D, Leedy, Kevin D, Green, Andrew J, Mou, Shin, Neal, Adam T, Asel, Thaddeus, Heller, Eric R, Hendricks, Nolan S, Liddy, Kyle, Crespo, Antonio, Miller, Nicholas C, Lindquist, Miles T, Moser, Neil A, Fitch, Robert C, Walker, Dennis E, Dorsey, Donald L, Jessen, Gregg H

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High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application von Cui, Peng, Moser, Neil, Chen, Hang, Xiao, John Q, Chabak, Kelson D, Zeng, Yuping

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Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band von Moser, Neil A., Asel, Tadj, Liddy, Kyle J., Lindquist, Miles, Miller, Nicholas C., Mou, Shin, Neal, Adam, Walker, Dennis E., Tetlak, Steve, Leedy, Kevin D., Jessen, Gregg H., Green, Andrew J., Chabak, Kelson D.

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RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band von Green, Andrew J., Moser, Neil, Miller, Nicholas C., Liddy, Kyle J., Lindquist, Miles, Elliot, Michael, Gillespie, James K., Fitch, Robert C., Gilbert, Ryan, Walker, Dennis E., Werner, Elizabeth, Crespo, Antonio, Beam, Edward, Xie, Andy, Lee, Cathy, Cao, Yu, Chabak, Kelson D.

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Theoretical Power Figure-of-Merit in β -Ga2O3 Lateral Power Transistors Determined Using Physics-Based TCAD Simulation von Ahmed, Shaikh S., Islam, Ahmad E., Dryden, Daniel M., Liddy, Kyle J., Hendricks, Nolan S., Moser, Neil A., Chabak, Kelson D., Green, Andrew J.

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Pragmatic randomised controlled trial of guided self-help versus individual cognitive behavioural therapy with a trauma focus for post-traumatic stress disorder (RAPID) von Bisson, Jonathan I, Ariti, Cono, Cullen, Katherine, Kitchiner, Neil, Lewis, Catrin, Roberts, Neil P, Simon, Natalie, Smallman, Kim, Addison, Katy, Bell, Vicky, Brookes-Howell, Lucy, Cosgrove, Sarah, Ehlers, Anke, Fitzsimmons, Deborah, Foscarini-Craggs, Paula, Harris, Shaun R S, Kelson, Mark, Lovell, Karina, McKenna, Maureen, McNamara, Rachel, Nollett, Claire, Pickles, Tim, Williams-Thomas, Rhys

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Defect Engineering at the Al2O3/(010) β-Ga2O3 Interface via Surface Treatments and Forming Gas Post-Deposition Anneals von Islam, Ahmad Ehteshamul, Zhang, Chenyu, DeLello, Kursti, Muller, David A., Leedy, Kevin D., Ganguli, Sabyasachi, Moser, Neil A., Kahler, Rachel, Williams, Jeremiah C., Dryden, Daniel M., Tetlak, Stephen, Liddy, Kyle J., Green, Andrew J., Chabak, Kelson D.

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Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit von Dryden, Daniel M., Liddy, Kyle J., Islam, Ahmad E., Williams, Jeremiah C., Walker, Dennis E., Hendricks, Nolan S., Moser, Neil A., Arias-Purdue, Andrea, Sepelak, Nicholas P., DeLello, Kursti, Chabak, Kelson D., Green, Andrew J.

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