Non-charge related mechanism affecting capacitive MEMS switch lifetime von Kucko, J.F., Petrosky, J.C., Reid, J.R., Yung Kee Yeo

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Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100) von Roucka, Radek, Beeler, Richard, Mathews, Jay, Ryu, Mee-Yi, Kee Yeo, Yung, Menéndez, José, Kouvetakis, John

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Photovoltaic device on a single ZnO nanowire p-n homojunction von Cho, Hak Dong, Zakirov, Anvar S, Yuldashev, Shavkat U, Ahn, Chi Won, Yeo, Yung Kee, Kang, Tae Won

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Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point von Ryu, Mee-Yi, Harris, Thomas R., Wang, Buguo, Yeo, Yung Kee, Hogsed, Michael R., Lee, Sang Jo, Kim, Jong Su, Kouvetakis, John

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Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy von Jo, Hyun-Jun, Kim, Geun Hyeong, Kim, Jong Su, Ryu, Mee-Yi, Yeo, Yung Kee, Harris, Thomas R., Kouvetakis, John

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Bimodal luminescence behavior of spatially-ordered seven-stacked InAs/InAlGaAs quantum dots von Oh, Jae Won, Ryu, Mee-Yi, Jo, Byounggu, Kim, Jin Soo, Harris, T.R., Yeo, Yung Kee

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Excitonic transitions in (Ga 1− x Mn x )N thin films with high Curie temperature von Jeon, Hee Chang, Lee, Ji Ah, Shon, Yoon, Lee, Seung Joo, Kang, Tae Won, Kim, Tae Whan, Kee Yeo, Yung, Hun Cho, Yong, Kim, Mun-Deok

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Magnetic and Electronic Properties of a Mn Delta-doping GaN Layer von Jeon, H. C., Lee, S. J., Kang, T. W., Chang, K. J., Yeo, Yung Kee, George, T. F.

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Room temperature ferromagnetic properties of transition metal implanted Al0.35Ga0.65N von RALEY, Jeremy A, YUNG KEE YEO, HENGEHOLD, Robert L, RYU, Mee-Yi, STEINER, Todd D

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Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition von Wang, Buguo, Fang, Z.-Q., Claflin, Bruce, Look, David, Kouvetakis, John, Yeo, Yung Kee

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Investigation of hydrogen inductively coupled plasma treatment effect for Ge0.938Sn0.062/Ge/Si film using photoreflectance spectroscopy von Jo, Hyun-Jun, Kim, Jong Su, Ryu, Mee-Yi, Yeo, Yung Kee, Kouvetakis, John

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Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies von Harris, Thomas R., Ryu, Mee-Yi, Yeo, Yung Kee, Wang, Buguo, Senaratne, C. L., Kouvetakis, John

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Observation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn) von Harris, Thomas R., Yeo, Yung Kee, Ryu, Mee-Yi, Beeler, Richard T., Kouvetakis, John

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Room temperature ferromagnetism in Mn ion implanted epitaxial ZnO films von Hill, D. H., Arena, D. A., Bartynski, R. A., Wu, P., Saraf, G., Lu, Y., Wielunski, L., Gateau, R., Dvorak, J., Moodenbaugh, A., Yeo, Yung Kee

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Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy von Jo, Hyun-Jun, So, Mo Geun, Kim, Jong Su, Ryu, Mee-Yi, Yeo, Yung Kee, Kouvetakis, John

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Temperature-Dependent Photoluminescence Studies of Ge1−y Sn y (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point von Mee-Yi Ryu, Harris, Thomas R, Wang, Buguo, Yeo, Yung Kee, Hogsed, Michael R, Lee, Sang Jo, Jong Su Kim, Kouvetakis, John

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Electrical characterization studies of p-type Ge, Ge1−ySny, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates von Harris, Thomas R., Ryu, Mee-Yi, Yeo, Yung Kee, Beeler, Richard T., Kouvetakis, John

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Electrical characterization studies of p-type Ge, Ge1−Sn , and Si0.09Ge0.882Sn0.028 grown on n-Si substrates von Harris, Thomas R., Ryu, Mee-Yi, Yeo, Yung Kee, Beeler, Richard T., Kouvetakis, John

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Ferromagnetism in Fe-implanted a -plane ZnO films von Wu, P., Saraf, G., Lu, Y., Hill, D. H., Gateau, R., Wielunski, L., Bartynski, R. A., Arena, D. A., Dvorak, J., Moodenbaugh, A., Siegrist, T., Raley, J. A., Yeo, Yung Kee

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The properties of germanium-tin alloys for infrared device applications von Kolodzey, J., Coppinger, M., Sangcheol Kim, Bhargava, N., Gupta, J., Chaoying Ni, Yung Kee Yeo

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