Beyond CMOS: heterogeneous integration of III-V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems von Kazior, Thomas E.

Volltext

GaN-Based RF Power Devices and Amplifiers von Mishra, Umesh K., Shen, Likun, Kazior, Thomas E., Wu, Yi-Feng

Volltext

(Invited) Heterogeneous Integration of III-V Devices and Si CMOS on a Silicon Substrate von Kazior, Thomas E., LaRoche, J., Hoke, W.

Volltext

Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems von Kazior, Thomas E.

Volltext

Trapping effects in GaN and SiC microwave FETs von Binari, S.C., Klein, P.B., Kazior, T.E.

Volltext

GaN technology for microwave and millimeter wave applications von Kolias, Nicholas J, Whelan, Colin S, Kazior, Thomas E, Smith, Kurt V

Volltext

Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates von Whelan, C.S., Kazior, T.E., Marsh, P.F., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Lemonias, P.J., Lardizabal, S.M., Leoni, R.E., Lichwala, S.J.

Volltext

GaN-Based RF Power Devices and Amplifiers : Gallium nitride power transistors can operate at millimeter wave and beyond to meet future needs of cell phones, satellites, and TV broa... von MISHRA, Umesh K, LIKUN SHEN, KAZIOR, Thomas E, WU, Yi-Feng

Volltext

GaN technology for microwave and millimeter wave applications von Kolias, N. J., Whelan, C. S., Kazior, T. E., Smith, K. V.

Volltext

METHODS FOR FORMING MICROSTRIP TRANSMISSION LINES ON THIN SILICON CARBIDE ON INSULATOR (SICOI) WAFERS von IP, Kelly P, LAROCHE, Jeffrey R, KAZIOR, Thomas E

Volltext bestellen

Trapping effects in GaN and SiC microwave FETs: Special Issue on Wide Bandgap Semiconductor Devices von BINARI, Steven C, KLEIN, P. B, KAZIOR, Thomas E

Volltext

Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures von Kazior, Thomas E, LaRoche, Jeffrey R, Ip, Kelly P, Chumbes, Eduardo M

Volltext bestellen

Nitride structures having low capacitance gate contacts integrated with copper damascene structures von IP, Kelly P, LAROCHE, Jeffrey R, CHUMBES, Eduardo M, KAZIOR, Thomas E

Volltext bestellen

GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LAYERS AND METHODS FOR FORMING SUCH STRUCTURES von KAZIOR, Thomas, E, CHUMBES, Eduardo, M, IP, Kelly, P, LAROCHE, Jeffrey, R

Volltext bestellen

NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING SUCH STRUCTURES von KAZIOR, Thomas, E, CHUMBES, Eduardo, M, IP, Kelly, P, LAROCHE, Jeffrey, R

Volltext bestellen

NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING SUCH STRUCTURES von IP, KELLY P, KAZIOR, THOMAS E, LAROCHE, JEFFREY R, CHUMBES, EDUARDO M

Volltext bestellen

GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LAYERS AND METHODS FOR FORMING SUCH STRUCTURES von Kazior, Thomas E, LaRoche, Jeffrey R, Ip, Kelly P, Chumbes, Eduardo M

Volltext bestellen

NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING SUCH STRUCTURES von IP, KELLY P, KAZIOR, THOMAS E, CHUMBES, EDUARDO M, LAROCHE, JEFFREY R

Volltext bestellen

NITRIDE STRUCTURES HAVING LOW CAPACITANCE GATE CONTACTS INTEGRATED WITH COPPER DAMASCENE STRUCTURES von KAZIOR, THOMAS, E, IP, KELLY, P, LAROCHE, JEFFREY, R, CHUMBES, EDUARDO, M

Volltext bestellen

Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures von Kazior, Thomas E, LaRoche, Jeffrey R, Ip, Kelly P, Chumbes, Eduardo M

Volltext bestellen