Optical properties of InGaN thin films in the entire composition range von Kazazis, S. A., Papadomanolaki, E., Androulidaki, M., Kayambaki, M., Iliopoulos, E.

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In-situ SiNx/InN structures for InN field-effect transistors von Zervos, Ch, Adikimenakis, A., Beleniotis, P., Kostopoulos, A., Kayambaki, M., Tsagaraki, K., Konstantinidis, G., Georgakilas, A.

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Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors von Zervos, Ch, Adikimenakis, A, Bairamis, A, Kostopoulos, A, Kayambaki, M, Tsagaraki, K, Konstantinidis, G, Georgakilas, A

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Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer von Bairamis, A., Zervos, Ch, Adikimenakis, A., Kostopoulos, A., Kayambaki, M., Tsagaraki, K., Konstantinidis, G., Georgakilas, A.

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Ultra-smooth GaN membranes by photo-electrochemical etching for photonic applications von Jayaprakash, R., Kalaitzakis, F. G., Kayambaki, M., Tsagaraki, K., Monroy, E., Pelekanos, N. T.

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Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques von Tsagaraki, Katerina, Kayambaki, Maria, Konstantinidis, George, Vamvoukakis, Konstantinos, Makris, Nikolaos, Nafouti, Maher, Stavrinidis, Antonis, Panagopoulou, Marianthi, Peyre, Herve, Alquier, Daniel, Zekentes, Konstantinos

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Channel width effect on the operation of 4H‐SiC vertical JFETs von Vamvoukakis, K., Stefanakis, D., Stavrinidis, A., Vassilevski, K., Konstantinidis, G., Kayambaki, M., Zekentes, K.

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Optical properties of InGaN thin films in the entire compositionrange von Androulidaki, M, Kayambaki, M

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High Power Self-Aligned, Trench-Implanted 4H-SiC JFETs von Vamvoukakis, K., Stavrinidis, A., Stefanakis, D., Konstantinidis, G., Kayambaki, M., Zekentes, K.

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GaN membrane metal-semiconductor-metal ultraviolet photodetector von Müller, A, Konstantinidis, G, Dragoman, M, Neculoiu, D, Kostopoulos, A, Androulidaki, M, Kayambaki, M, Vasilache, D

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Properties of strontium copper oxide (SCO) deposited by PLD using the 308 nm laser and formation of SCO/Si heterostructures von Louloudakis, D., Varda, M., Papadopoulou, E. L., Kayambaki, M., Tsagaraki, K., Kambilafka, V., Modreanu, M., Huyberechts, G., Aperathitis, E.

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Mechanism of Si outdiffusion in plasma-assisted molecular beam epitaxy of GaN on Si von Adikimenakis, A., Aretouli, K. E., Tsagaraki, K., Kayambaki, M., Georgakilas, A.

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On application of electrochemical capacitance–voltage profiling technique for n-type SiC von Mynbaeva, M, Kayambaki, M, Mynbaev, K, Zekentes, K

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Growth Optimization of an Electron Confining InN/GaN Quantum Well Heterostructure von Dimakis, E., Iliopoulos, E., Kayambaki, M., Tsagaraki, K., Kostopoulos, A., Konstantinidis, G., Georgakilas, A.

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The effect of PLD deposition parameters on the properties of p-SrCu2O2/n-Si diodes von PAPADOPOULOU, E. L, VARDA, M, APERATHITIS, E, PENNOS, A, KALOUDIS, M, KAYAMBAKI, M, ANDROULIDAKI, M, TSAGARAKI, K, VISKADOURAKIS, Z, DURAND, O, HUYBERECHTS, G

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Cr/4H-SiC Schottky contacts investigated by electrical and photoelectron spectroscopy techniques von Koliakoudakis, C., Dontas, J., Karakalos, S., Kayambaki, M., Ladas, S., Konstantinidis, G., Zekentes, K., Kennou, S.

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Investigation into the charge distribution and barrier profile tailoring in AlGaN/GaN double heterostructures by self-consistent Poisson–Schrödinger calculations and capacitance–vo... von Zervos, M., Kostopoulos, A., Constantinidis, G., Kayambaki, M., Georgakilas, A.

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Selective photochemical etching of GaN films and laser lift-off for microcavity fabrication von Trichas, E., Xenogianni, C., Kayambaki, M., Tsotsis, P., Iliopoulos, E., Pelekanos, N. T., Savvidis, P. G.

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A Continuous Semi-Empirical VJFET Capacitance Model from Sub to above Threshold Regime von Zekentes, Konstantinos, Kayambaki, Maria, Stavrinidis, Antonis, Konstantinidis, George, Makris, Nikolaos

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On the Optimum Determination and Use of SiC VJFET Threshold Voltage von Kayambaki, Maria, Konstantinidis, George, Stavrinidis, Antonis, Makris, Nikolaos, Zekentes, Konstantinos

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