Electron lifetime and diffusion coefficient in dopant-free p-type distributed polarization doped AlGaN von Kumabe, Takeru, Kawasaki, Seiya, Watanabe, Hirotaka, Honda, Yoshio, Amano, Hiroshi

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Hole mobility limiting factors in dopant-free p-type distributed polarization-doped AlGaN von Kumabe, Takeru, Kawasaki, Seiya, Watanabe, Hirotaka, Honda, Yoshio, Amano, Hiroshi

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Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy von Ohnishi, Kazuki, Kawasaki, Seiya, Fujimoto, Naoki, Nitta, Shugo, Watanabe, Hirotaka, Honda, Yoshio, Amano, Hiroshi

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Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics von Ogura, Hiroto, Kawasaki, Seiya, Liu, Zheng, Endo, Takahiko, Maruyama, Mina, Gao, Yanlin, Nakanishi, Yusuke, Lim, Hong En, Yanagi, Kazuhiro, Irisawa, Toshifumi, Ueno, Keiji, Okada, Susumu, Nagashio, Kosuke, Miyata, Yasumitsu

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Erratum: “Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy” [Appl. Phys. Lett. 119, 152102 (2021)] von Ohnishi, Kazuki, Kawasaki, Seiya, Fujimoto, Naoki, Nitta, Shugo, Watanabe, Hirotaka, Honda, Yoshio, Amano, Hiroshi

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Space–Charge Profiles and Carrier Transport Properties in Dopant‐Free GaN‐Based p‐n Junction Formed by Distributed Polarization Doping von Kumabe, Takeru, Kawasaki, Seiya, Watanabe, Hirotaka, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi

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Experimental demonstration of GaN IMPATT diode at X-band von Kawasaki, Seiya, Ando, Yuto, Deki, Manato, Watanabe, Hirotaka, Tanaka, Atsushi, Nitta, Shugo, Honda, Yoshio, Arai, Manabu, Amano, Hiroshi

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Interspecific competition and adaptation of anammox bacteria at different salinities: Experimental validation of the Monod growth model with salinity inhibition von Okabe, Satoshi, Kamizono, Akimichi, Kawasaki, Seiya, Kobayashi, Kanae, Oshiki, Mamoru

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Salinity Tolerance and Osmoadaptation Strategies in Four Genera of Anammox Bacteria: Brocadia, Jettenia, Kuenenia, and Scalindua von Okabe, Satoshi, Kamizono, Akimichi, Zhang, Lei, Kawasaki, Seiya, Kobayashi, Kanae, Oshiki, Mamoru

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Reverse Leakage Mechanism of Dislocation-Free GaN Vertical p-n Diodes von Kwon, Woong, Kawasaki, Seiya, Watanabe, Hirotaka, Tanaka, Atsushi, Honda, Yoshio, Ikeda, Hirotaka, Iso, Kenji, Amano, Hiroshi

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15 GHz GaN Hi-Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W von Kawasaki, Seiya, Kumabe, Takeru, Deki, Manato, Watanabe, Hirotaka, Tanaka, Atsushi, Honda, Yoshio, Arai, Manabu, Amano, Hiroshi

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Negative Differential Resistance Device with High Peak-to-Valley Ratio Realized by Subband Resonant Tunneling of Γ-Valley Carriers in WSe 2 / h -BN/WSe 2 Junctions von Kinoshita, Kei, Moriya, Rai, Kawasaki, Seiya, Okazaki, Shota, Onodera, Momoko, Zhang, Yijin, Watanabe, Kenji, Taniguchi, Takashi, Sasagawa, Takao, Machida, Tomoki

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Negative Differential Resistance Device with High Peak-to-Valley Ratio Realized by Subband Resonant Tunneling of Γ‑Valley Carriers in WSe2/h‑BN/WSe2 Junctions von Kinoshita, Kei, Moriya, Rai, Kawasaki, Seiya, Okazaki, Shota, Onodera, Momoko, Zhang, Yijin, Watanabe, Kenji, Taniguchi, Takashi, Sasagawa, Takao, Machida, Tomoki

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Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping von Kumabe, Takeru, Yoshikawa, Akira, Kawasaki, Seiya, Kushimoto, Maki, Honda, Yoshio, Arai, Manabu, Suda, Jun, Amano, Hiroshi

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Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz von Kawasaki, Seiya, Kumabe, Takeru, Ando, Yuto, Deki, Manato, Watanabe, Hirotaka, Tanaka, Atsushi, Honda, Yoshio, Arai, Manabu, Amano, Hiroshi

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Minigap-induced negative differential resistance in multilayer Mo S 2 -based tunnel junctions von Kawasaki, Seiya, Kinoshita, Kei, Moriya, Rai, Onodera, Momoko, Zhang, Yijin, Watanabe, Kenji, Taniguchi, Takashi, Sasagawa, Takao, Machida, Tomoki

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Development of wood decay in bark-stripped Sugi (Cryptomeria japonica (Thunb. ex L.f.) D. Don) stem by Japanese black bear (Ursus thibetanus japonicus Schlegel) (Ⅱ): A case study o... von OHSHIMA, Jyunichi, KAWASAKI, Seiya, NODERA, Kaito, IIZUKA, Kazuya, ISHIGURI, Futoshi, YOKOTA, Shinso

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Effect of Dislocations in Nitride Semiconductors on Device Characteristics von Honda, Yoshio, Tanaka, Atsushi, Kawasaki, Seiya, Watanabe, Hirotaka, Amano, Hiroshi

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Defects observation in GaN pn junction diodes by optical and electrical property von Honda, Yoshio, Tanaka, Atsushi, Kawasaki, Seiya, Deki, Manato, Hiroshi, Amano

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Experimental demonstration of GaN IMPATT diode at X-band von Kawasaki, Seiya, Ando, Yuto, Deki, Manato, Watanabe, Hirotaka, Tanaka, Atsushi, Nitta, Shugo, Honda, Yoshio, Arai, Manabu, Amano, Hiroshi

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