Device parameter extraction in the linear region of MOSFET's von Katto, H.

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Physical parameters of the quantum mechanical interference method for the determination of oxide thickness in MOS devices von Katto, H.

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A compact and accurate MOSFET model with simple expressions for linear, saturation and sub-threshold regions von Katto, Hisao

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Analytical model for extrinsic time-dependent dielectric breakdown of thin gate oxide von Katto, Hisao

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Device parameters extracted in the linear region of MOSFET by comparing with the exact gradual channel model von Katto, Hisao

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Positive/negative BT instability in scaled N/P-MOSFETs and MOSCs von Katto, H.

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A Practical Access to [1-13C]1-Deoxy-d-xylulose and its Derivatives von Okumoto, Hiroshi, Katto, Hiroko

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LSF technique to analyze intrinsic TDDB failures of gate oxides von Katto, H.

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Biosynthetic pathway for the C45 polyprenol, solanesol, in tobacco von Fukusaki, E. (Osaka Univ., Suita (Japan)), Takeno, S, Bamba, T, Okumoto, H, Katto, H, Kajiyama, S, Kobayashi, A

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Acceleration factors of PMOS hot carrier degradation von Katto, H.

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Temperature constant BT tests of parasitic MOSFETs von Katto, H.

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VLSI reliability challenges: from device physics to wafer scale systems von Takeda, E., Ikuzaki, K., Katto, H., Ohji, Y., Hinode, K., Hamada, A., Sakuta, T., Funabiki, T., Sasaki, T.

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Hi-MNOS II technology for a 64-kbit byte-erasable 5-V-only EEPROM von Yatsuda, Y., Nabetani, S., Uchida, K., Minami, S., Terasawa, M., Hagiwara, T., Katto, H., Yasui, T.

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Hi-MNOS II Technology for a 64-kbit Byte-Erasable 5-V-Only EEPROM von Yatsuda, Y., Nabetani, S., Uchida, K., Minami, S., Terasawa, M., Hagiwara, T., Katto, H., Yasui, T.

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Effect of reverse measurement on the HC instability evaluation of MOSFETs von Katto, H.

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A 5 V-only 64K dynamic RAM based on high S/N design von Masuda, H., Hori, R., Kamigaki, Y., Itoh, K., Kawamoto, H., Katto, H.

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FCAT-A low-voltage high-speed alterable n-channel nonvolatile memory device von Horiuchi, M., Katto, H.

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Determination of surface state density from gm − VG characteristics of MOSFETs von Katto, H., Muramatsu, S.

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Preparation and Properties of Aluminum Oxide Films Obtained by Glow Discharge Technique von Katto, H., Koga, Y.

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Analytical expressions for the static MOS transistor characteristics based on the gradual channel model von Katto, H., Itoh, Y.

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