A III–V nanowire channel on silicon for high-performance vertical transistors von Tomioka, Katsuhiro, Yoshimura, Masatoshi, Fukui, Takashi

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Tunnel field-effect transistor using InAs nanowire/Si heterojunction von Tomioka, Katsuhiro, Fukui, Takashi

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Integration of Indium Arsenide/Indium Phosphide Core-Shell Nanowire Vertical Gate-All-Around Field-Effect Transistors on Si von Gamo, Hironori, Tomioka, Katsuhiro

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Control of InAs Nanowire Growth Directions on Si von Tomioka, Katsuhiro, Motohisa, Junichi, Hara, Shinjiroh, Fukui, Takashi

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GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si von Tomioka, Katsuhiro, Motohisa, Junichi, Hara, Shinjiroh, Hiruma, Kenji, Fukui, Takashi

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Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length von Tomioka, Katsuhiro, Fukui, Takashi

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Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes von Tomioka, Katsuhiro, Motohisa, Junichi, Fukui, Takashi

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Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium von Yoshida, Akinobu, Gamo, Hironori, Motohisa, Junichi, Tomioka, Katsuhiro

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Recent progress in integration of III-V nanowire transistors on Si substrate by selective-area growth von Tomioka, Katsuhiro, Fukui, Takashi

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Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy von Motohisa, Junichi, Kameda, Hiroki, Sasaki, Masahiro, Tomioka, Katsuhiro

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InGaAs-InP core–shell nanowire/Si junction for vertical tunnel field-effect transistor von Tomioka, Katsuhiro, Ishizaka, Fumiya, Motohisa, Junichi, Fukui, Takashi

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Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs von Akamatsu, Tomoya, Tomioka, Katsuhiro, Motohisa, Junichi

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Characterization of nanowire light-emitting diodes with InP/InAsP heterostructures emitting in telecom band von Motohisa, Junichi, Tomoya, Akamatsu, Manami, Okamoto, Katsuhiro, Tomioka

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Selective-area growth of pulse-doped InAs nanowires on Si and vertical transistor application von Gamo, Hironori, Tomioka, Katsuhiro

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Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor Application von Tomioka, Katsuhiro, Izhizaka, Fumiya, Fukui, Takashi

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Zinc Blende and Wurtzite Crystal Phase Mixing and Transition in Indium Phosphide Nanowires von Ikejiri, Keitaro, Kitauchi, Yusuke, Tomioka, Katsuhiro, Motohisa, Junichi, Fukui, Takashi

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Growth of All-Wurtzite InP/AlInP Core–Multishell Nanowire Array von Ishizaka, Fumiya, Hiraya, Yoshihiro, Tomioka, Katsuhiro, Motohisa, Junichi, Fukui, Takashi

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Growth and characterization of GaAs nanowires on Ge(1 1 1) substrates by selective-area MOVPE von Minami, Yusuke, Yoshida, Akinobu, Motohisa, Junichi, Tomioka, Katsuhiro

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III-V Nanowires on Si Substrate: Selective-Area Growth and Device Applications von Tomioka, K., Tanaka, T., Hara, S., Hiruma, K., Fukui, T.

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Growth of Core–Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy von Goto, Hajime, Nosaki, Katsutoshi, Tomioka, Katsuhiro, Hara, Shinjiro, Hiruma, Kenji, Motohisa, Junichi, Fukui, Takashi

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