nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 [mu]m von Kulikov, V. B, Maslov, D. V, Sabirov, A. R, Solodkov, A. A, Dudin, A. L, Katsavets, N. I, Kogan, I. V

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nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 μm von Kulikov, V. B., Maslov, D. V., Sabirov, A. R., Solodkov, A. A., Dudin, A. L., Katsavets, N. I., Kogan, I. V., Shukov, I. V., Chaly, V. P.

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Hydride vapour phase epitaxy of GaN on molecular beam epitaxial GaN substrates von Bel'kov, V.V, Botnaryuk, V.M, Fedorov, L.M, Goncharuk, I.N, Novikov, S.V, Ulin, V.P, Zhilyaev, Yu.V, Cheng, T.S, Jeffs, N.J, Foxon, C.T, Katsavets, N.I, Harrison, I

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Study of GaN thin layers subjected to high-temperature rapid thermal annealing von Katsavets, N. I., Laws, G. M., Harrison, I., Larkins, E. C., Benson, T. M., Cheng, T. S., Foxon, C. T.

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Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 x 288 Elements von Boltar, K.O, Burlakov, I.D, Vlasov, P.V, Lopukhin, A.A, Chaliy, V.P, Katsavets, N.I

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Powerful highly stable laser diodes for pumping of solid-state lasers von Demidov, D M, Katsavets, N I, Ter-Martirosyan, A L, Chalyi, V P

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Highly efficient high-power quasi-continuous diode laser bars for pumping solid-state lasers based on Yb-containing active media von Katsavets, N. I., Buchenkov, V. A., Demidov, D. M., Leus, R. V., Iskandarov, M. O., Nikitichev, A. A., Ter-Martirosyan, A. L.

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AlGaAs/GaAs multiquantum-well heterostructures for long-wavelength (8–10 μm) IR photodetectors von Butyagin, O. F., Katsavets, N. I., Kogan, I. V., Krasovitsky, D. M., Kulikov, V. B., Chalyi, V. P., Dudin, A. L., Cherednichenko, O. B.

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High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown In0.1Ga0.9As/AlGaAs/GaAs heterostructures von Aleksandrov, S. B., Alekseev, A. N., Demidov, D. M., Dudin, A. L., Katsavets, N. I., Kogan, I. V., Pogorel’skii, Yu. V., Ter-Martirosyan, A. L., Sokolov, É. G., Chaly, V. P., Shkurko, A. P.

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100-Watt laser bars based on phase-locked arrays von Demidov, D. M., Ivkin, A. N., Katsavets, N. I., Kokin, S. V., Leus, R. V., Ter-Martirosyan, A. L., Chalyi, V. P.

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AlGaAs/GaAs-heterostructure cw laser diodes with a working output optical power of 3 W (λ=0.81 μm) and an operating life of 2000 hours von Demidov, D. M., Katsavets, N. I., Leus, R. V., Ter-Martirosyan, A. L., Chalyi, V. P.

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High-power semiconductor radiation sources based on 100-W diode laser bars for pumping solid-state lasers von Katsavets, N. I., Buchenkov, V. A., Iskandarov, M. O., Nikitichev, A. A., Sokolov, É. G., Ter-Martirosyan, A. L.

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Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, 1048–1053 (October 1998)] von Katsavets, N. I., Laws, G. M., Harrison, I., Larkins, E. C., Benson, T. M., Cheng, T. S., Foxon, C. T.

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Challenges and prospects of A3B5 microvawe foundry von Krasovitsky, D. M., Dudin, A. L., Katsavets, N. I., Kokin, S. V., Filaretov, A. G., Chaly, V. P., Viuginov, V. N.

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High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers von Garbuzov, D.Z., Antonishkis, N.Y., Bondarev, A.D., Gulakov, A.B., Zhigulin, S.N., Katsavets, N.I., Kochergin, A.V., Rafailov, E.V.

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High-power 0.8 micron InGaAsP-GaAs SCH SQW lasers von GARBUZOV, DMITRIIZ, ANTONISHKIS, N I U, Bondarev, A D, GULAKOV, A B, Zhigulin, S N, KATSAVETS, N I, KOCHERGIN, A V, RAFAILOV, E V

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High-power 0.8 mum InGaAsP-GaAs SCH SQW lasers von Garbuzov, D Z, Antonishkis, N Y, Bondarev, A D, Gulakov, A B, Zhigulin, S N, Katsavets, N I, Kochergin, A V, Rafailov, E V

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Powerful highly stable laser diodes for pumping of solid-state lasers von DEMIDOV, D. M, KATSAVETS, N. I, TER-MARTIROSYAN, A. L, CHALYI, V. P

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High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes von Garbuzov, D.Z., Antonishkis, N.Y., Il'inskaya, N.D., Zhigulin, S.N., Katsavets, N.I., Kochergin, A.V., Pyataev, V.Z., Fuksman, M.V.

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Industrial Technologies For III-Nitride-Based Electronics von Krasovitsky, Dmitry, Alexeev, Alexey, Dudin, Anatoly, Kokin, Sergey, Katsavets, Nickolay, Chaly, Victor

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