Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy von Oshima, Y., Kawara, K., Shinohe, T., Hitora, T., Kasu, M., Fujita, S.

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Reduction of dislocation densities in single crystal CVD diamond by confinement in the lateral sector von Boussadi, A., Tallaire, A., Kasu, M., Barjon, J., Achard, J.

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The genetic landscape of South African males: A Y-STR perspective von Kasu, M., Cloete, K.W., Pitere, R., Tsiana, K.J., D’Amato, M.E.

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Electronic and surface properties of H-terminated diamond surface affected by NO2 gas von KUBOVIC, M, KASU, M, KAGESHIMA, H, MAEDA, F

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Diamond-based RF power transistors: Fundamentals and applications von Kasu, M., Ueda, K., Yamauchi, Y., Tallaire, A., Makimoto, T.

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Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmax of 120 GHz von Ueda, K., Kasu, M., Yamauchi, Y., Makimoto, T., Schwitters, M., Twitchen, D.J., Scarsbrook, G.A., Coe, S.E.

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Origin of growth defects in CVD diamond epitaxial films von Tallaire, A., Kasu, M., Ueda, K., Makimoto, T.

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Molecular beam epitaxial growth of hexagonal boron nitride on Ni(1 1 1) substrate von Tsai, C.L., Kobayashi, Y., Akasaka, T., Kasu, M.

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2 W/mm output power density at 1 GHz for diamond FETs von Kasu, M., Ueda, K., Ye, H., Yamauchi, Y., Sasaki, S., Makimoto, T.

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High RF output power for H-terminated diamond FETs von Kasu, M., Ueda, K., Ye, H., Yamauchi, Y., Sasaki, S., Makimoto, T.

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High-pressure and high-temperature annealing effects of boron-implanted diamond von Ueda, K., Kasu, M.

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An aluminium nitride light-emitting diode with a wavelength of 210 nanometres von Taniyasu, Yoshitaka, Kasu, Makoto, Makimoto, Toshiki

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Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering von Leute, R. A. R., Feneberg, M., Sauer, R., Thonke, K., Thapa, S. B., Scholz, F., Taniyasu, Y., Kasu, M.

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High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond von Ueda, K., Kasu, M., Makimoto, T.

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High-pressure and high-temperature annealing of diamond ion-implanted with various elements von Ueda, K., Kasu, M.

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Influence of epitaxy on the surface conduction of diamond film von Kasu, M, Kubovic, M, Aleksov, A, Teofilov, N, Taniyasu, Y, Sauer, R, Kohn, E, Makimoto, T, Kobayashi, N

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Microwave performance evaluation of diamond surface channel FETs von Kubovic, M., Kasu, M., Kallfass, I., Neuburger, M., Aleksov, A., Koley, G., Spencer, M.G., Kohn, E.

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Beryllium-doped single-crystal diamond grown by microwave plasma CVD von Ueda, K., Kasu, M.

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Thick diamond layers angled by polishing to reveal defect and impurity depth profiles von Tallaire, A., Kasu, M., Ueda, K.

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Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate von Prinz, G.i M., Ladenburger, A., Schirra, M., Feneberg, M., Thonke, K., Sauer, R., Taniyasu, Y., Kasu, M., Makimoto, T.

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