Infrared dielectric functions and phonon modes of high-quality ZnO films von Ashkenov, N., Mbenkum, B. N., Bundesmann, C., Riede, V., Lorenz, M., Spemann, D., Kaidashev, E. M., Kasic, A., Schubert, M., Grundmann, M., Wagner, G., Neumann, H., Darakchieva, V., Arwin, H., Monemar, B.

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Mie resonances, infrared emission, and the band gap of InN von Shubina, T V, Ivanov, S V, Jmerik, V N, Solnyshkov, D D, Vekshin, V A, Kop'ev, P S, Vasson, A, Leymarie, J, Kavokin, A, Amano, H, Shimono, K, Kasic, A, Monemar, B

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Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template von Gogova, D., Kasic, A., Larsson, H., Hemmingsson, C., Monemar, B., Tuomisto, F., Saarinen, K., Dobos, L., Pécz, B., Gibart, P., Beaumont, B.

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Inn dielectric function from the midinfrared to the ultraviolet range von KASIC, A, VALCHEVA, E, MONEMAR, B, LU, H, SCHAFF, W. J

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Strain-related structural and vibrational properties of thin epitaxial AlN layers von DARAKCHIEVA, V, BIRCH, J, SCHUBERT, M, PASKOVA, T, TUNGASMITA, S, WAGNER, G, KASIC, A, MONEMAR, B

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Free-carrier and phonon properties of n - and p -type hexagonal GaN films measured by infrared ellipsometry von Kasic, A., Schubert, M., Einfeldt, S., Hommel, D., Tiwald, T. E.

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Disorder-activated infrared modes and surface depletion layer in highly Si-doped hexagonal GaN von Kasic, A., Schubert, M., Kuhn, B., Scholz, F., Einfeldt, S., Hommel, D.

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Phonon modes of GaNyP1−y (0.006⩽y⩽0.0285) measured by midinfrared spectroscopic ellipsometry von Leibiger, G., Gottschalch, V., Kasic, A., Schubert, M.

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Biogeochemical and historical drivers of microbial community composition and structure in sediments from Mercer Subglacial Lake, West Antarctica von Davis, Christina L, Venturelli, Ryan A, Michaud, Alexander B, Hawkings, Jon R, Achberger, Amanda M, Vick-Majors, Trista J, Rosenheim, Brad E, Dore, John E, Steigmeyer, August, Skidmore, Mark L, Barker, Joel D, Benning, Liane G, Siegfried, Matthew R, Priscu, John C, Christner, Brent C

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Effective electron mass and phonon modes in n -type hexagonal InN von Kasic, A., Schubert, M., Saito, Y., Nanishi, Y., Wagner, G.

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Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN von Kasic, A., Gogova, D., Larsson, H., Hemmingsson, C., Ivanov, I., Monemar, B., Bundesmann, C., Schubert, M.

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Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices von Paskova, T., Paskov, P. P., Valcheva, E., Darakchieva, V., Birch, J., Kasic, A., Arnaudov, B., Tungasmita, S., Monemar, B.

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Characterization of crack-free relaxed GaN grown on 2 ″ sapphire von Kasic, A., Gogova, D., Larsson, H., Ivanov, I., Hemmingsson, C., Yakimova, R., Monemar, B., Heuken, M.

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Infrared spectroscopic ellipsometry—a new tool for characterization of semiconductor heterostructures von Kasic, A., Schubert, M., Einfeldt, S., Hommel, D.

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Phonons and free carriers in strained hexagonal GaN/AlGaN superlattices measured by infrared ellipsometry and Raman spectroscopy von Schubert, M, Kasic, A, Šik, J, Einfeldt, S, Hommel, D, Härle, V, Off, J, Scholz, F

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Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior von Darakchieva, V., Schubert, M., Birch, J., Kasic, A., Tungasmita, S., Paskova, T., Monemar, B.

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Optical Phonons in Hexagonal AlxInyGa1-x-yN (y ≈ 0.12) von Kasic, A., Schubert, M., Off, J., Scholz, F., Einfeldt, S., Hommel, D.

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Optical properties of InN—the bandgap question von Monemar, B., Paskov, P.P., Kasic, A.

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Effective carrier mass and mobility versus carrier concentration in p- and n-type α-GaN determined by infrared ellipsometry and Hall resistivity measurements von Kasic, A, Schubert, M, Rheinländer, B, Riede, V, Einfeldt, S, Hommel, D, Kuhn, B, Off, J, Scholz, F

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Strain-related structural and vibrational properties of thin epitaxial AIN layers von Darakchieva, Vanya, Birch, Jens, Schubert, M, Paskova, Tanja, Tungasmita, S, Wagner, G, Kasic, A, Monemar, Bo

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