Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories von Banerjee, Writam, Kashir, Alireza, Kamba, Stanislav

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Effect of dead layers on the ferroelectric property of ultrathin HfZrOx film von Oh, Seungyeol, Kim, Hyungwoo, Kashir, Alireza, Hwang, Hyunsang

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Ferroelectric and Dielectric Properties of Hf0.5Zr0.5O2 Thin Film Near Morphotropic Phase Boundary von Kashir, Alireza, Hwang, Hyunsang

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A thin film perspective on quantum functional oxides von Biswas, Abhijit, Talha, Muhammad, Kashir, Alireza, Jeong, Yoon Hee

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A CMOS-compatible morphotropic phase boundary von Kashir, Alireza, Hwang, Hyunsang

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Dielectric Properties of Strained Nickel Oxide Thin Films von Kashir, Alireza, Jeong, Hyeon-Woo, Lee, Gil-Ho, Mikheenko, Pavlo, Jeong, Yoon Hee

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Defect Engineering to Achieve Wake‐up Free HfO2‐Based Ferroelectrics von Kashir, Alireza, Oh, Seungyeol, Hwang, Hyunsang

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Ferroelectric and Dielectric Properties of Hf 0.5 Zr 0.5 O 2 Thin Film Near Morphotropic Phase Boundary von Kashir, Alireza, Hwang, Hyunsang

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Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering von Kashir, Alireza, Kim, Hyungwoo, Oh, Seungyeol, Hwang, Hyunsang

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Towards an ideal high-κ HfO2–ZrO2-based dielectric von Kashir, Alireza, Farahani, Mehrdad Ghiasabadi, Hwang, Hyunsang

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A new approach to achieving strong ferroelectric properties in TiN/Hf0.5Zr0.5O2/TiN devices von Kim, Hyungwoo, Kashir, Alireza, Oh, Seungyeol, Hwang, Hyunsang

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Towards an ideal high-κ HfO 2 –ZrO 2 -based dielectric von Kashir, Alireza, Ghiasabadi Farahani, Mehrdad, Hwang, Hyunsang

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Towards an ideal high-κ HfO-ZrO-based dielectric von Kashir, Alireza, Ghiasabadi Farahani, Mehrdad, Hwang, Hyunsang

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Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2 ferroelectric device von Kim, Hyungwoo, Kashir, Alireza, Oh, Seungyeol, Jang, Hojung, Hwang, Hyunsang

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High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2 devices by control of oxygen-deficient layer von Yadav, Manoj, Kashir, Alireza, Oh, Seungyeol, Nikam, Revannath Dnyandeo, Kim, Hyungwoo, Jang, Hojung, Hwang, Hyunsang

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High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2devices by control of oxygen-deficient layer von Yadav, Manoj, Kashir, Alireza, Oh, Seungyeol, Nikam, Revannath Dnyandeo, Kim, Hyungwoo, Jang, Hojung, Hwang, Hyunsang

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Improvement of endurance and switching speed in Hf 1−x Zr x O 2 thin films using a nanolaminate structure von Jang, Hojung, Kashir, Alireza, Oh, Seungyeol, Hwang, Hyunsang

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Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2ferroelectric device von Kim, Hyungwoo, Kashir, Alireza, Oh, Seungyeol, Jang, Hojung, Hwang, Hyunsang

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Improvement of endurance and switching speed in Hf1−x Zr x O2 thin films using a nanolaminate structure von Jang, Hojung, Kashir, Alireza, Oh, Seungyeol, Hwang, Hyunsang

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Defect Engineering to Achieve Wake‐up Free HfO 2 ‐Based Ferroelectrics von Kashir, Alireza, Oh, Seungyeol, Hwang, Hyunsang

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