Integrated transversal equalizers in high-speed fiber-optic systems von Hui Wu, Tierno, J.A., Pepeljugoski, P., Schaub, J., Gowda, S., Kash, J.A., Hajimiri, A.

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A Single-Chip CMOS-Based Parallel Optical Transceiver Capable of 240-Gb/s Bidirectional Data Rates von Schow, C.L., Doany, F.E., Baks, C.W., Kwark, Y.H., Kuchta, D.M., Kash, J.A.

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Terabus: Terabit/Second-Class Card-Level Optical Interconnect Technologies von Schares, L., Kash, J.A., Doany, F.E., Schow, C.L., Schuster, C., Kuchta, D.M., Pepeljugoski, P.K., Trewhella, J.M., Baks, C.W., John, R.A., Shan, L., Kwark, Y.H., Budd, R.A., Chiniwalla, P., Libsch, F.R., Rosner, J., Tsang, C.K., Patel, C.S., Schaub, J.D., Dangel, R., Horst, F., Offrein, B.J., Kucharski, D., Guckenberger, D., Hegde, S., Nyikal, H., Chao-Kun Lin, Tandon, A., Trott, G.R., Nystrom, M., Bour, D.P., Tan, M.R.T., Dolfi, D.W.

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Optical technologies for data communication in large parallel systems von Ritter, M B, Vlasov, Y, Kash, J A, Benner, A

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Dynamic internal testing of CMOS circuits using hot luminescence von Kash, J.A., Tsang, J.C.

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Picosecond hot electron light emission from submicron complementary metal–oxide–semiconductor circuits von Tsang, J. C., Kash, J. A.

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Low-Power 16 x 10 Gb/s Bi-Directional Single Chip CMOS Optical Transceivers Operating at aa 5 mW/Gb/s/link von Schow, CL, Doany, F E, Chen, C, Rylyakov, A V, Baks, C W, Kuchta, D M, John, R A, Kash, JA

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Time-resolved optical characterization of electrical activity in integrated circuits von Tsang, J.C., Kash, J.A., Vallett, D.P.

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Fermi-Dirac distribution of excitons in coupled quantum wells von KASH, J. A, ZACHAU, M, MENDEZ, E. E, HONG, J. M, FUKUZAWA, T

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160 Gb/s Bidirectional Polymer-Waveguide Board-Level Optical Interconnects Using CMOS-Based Transceivers von Doany, F.E., Schow, C.L., Baks, C.W., Kuchta, D.M., Pepeljugoski, P., Schares, L., Budd, R., Libsch, F., Dangel, R., Horst, F., Offrein, B.J., Kash, J.A.

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Hot Luminescence from CMOS Circuits: A Picosecond Probe of Internal Timing von Kash, J. A., Tsang, J. C.

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Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation von Guha, S., Agahi, F., Pezeshki, B., Kash, J. A., Kisker, D. W., Bojarczuk, N. A.

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Watching chips work: picosecond hot electron light emission from integrated circuits von Kash, J.A, Tsang, J.C

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Subpicosecond time-resolved Raman spectroscopy of LO phonons in GaAs von KASH, J. A, TSANG, J. C, HVAM, J. M

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Comment on "Origin of the Stokes shift: A geometrical model of exciton spectra in 2D semiconductors" von Kash, JA

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Hot-electron recombination at neutral acceptors in GaAs: a cw probe of femtosecond intervalley scattering von ULBRICH, R. G, KASH, J. A, TSANG, J. C

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A gratingless wavelength stabilized semiconductor laser von Pezeshki, Bardia, Agahi, Farid, Kash, Jeffrey A.

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Recombination in GaAs at the AlAs oxide-GaAs interface von Kash, J. A., Pezeshki, B., Agahi, F., Bojarczuk, N. A.

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PICA: Backside failure analysis of CMOS circuits using Picosecond Imaging Circuit Analysis von Mc Manus, M.K., Kash, J.A., Steen, S.E., Polonsky, S., Tsang, J.C., Knebel, D.R., Huott, W.

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Anisotropic valence bands in quantum wells : quantitative comparison of theory and experiment von KASH, J. A, ZACHAU, M, TISCHLER, M. A, EKENBERG, U

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