Integrated terahertz radar based on leaky-wave coherence tomography von Matsumoto, Hironori, Watanabe, Issei, Kasamatsu, Akifumi, Monnai, Yasuaki

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A 38 dB Gain, Low-Loss, Flat Array Antenna for 320-400 GHz Enabled by Silicon-on-Insulator Micromachining von Gomez-Torrent, Adrian, Tomura, Takashi, Kuramoto, Wataru, Hirokawa, Jiro, Watanabe, Issei, Kasamatsu, Akifumi, Oberhammer, Joachim

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Hole-tunneling Si0.82Ge0.18/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/cm2 fabricated by sputter epitaxy von Suda, Yoshiyuki, Hirose, Nobumitsu, Tsukamoto, Takahiro, Wakiya, Minoru, Shinkawa, Ayaka, Kasamatsu, Akifumi, Matsui, Toshiaki

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Investigation of Sn surface segregation during GeSn epitaxial growth by Auger electron spectroscopy and energy dispersive x-ray spectroscopy von Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Mimura, Takashi, Matsui, Toshiaki, Suda, Yoshiyuki

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Evaluation of crystallinity of lattice-matched Ge/GeSiSn heterostructure by Raman spectroscopy von Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Matsui, Toshiaki, Suda, Yoshiyuki

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Sn distribution in Ge/GeSn heterostructures formed by sputter epitaxy method von Tsukamoto, Takahiro, Ikeno, Kento, Hirose, Nobumitsu, Kasamatsu, Akifumi, Matsui, Toshiaki, Suda, Yoshiyuki

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Direct Growth of Patterned Ge on Insulators Using Graphene von Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Matsui, Toshiaki, Suda, Yoshiyuki

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Development of Complex Relative Permittivity Measurement System Based on Free-Space in 220-330-GHz Range von Tosaka, Toshihide, Fujii, Katsumi, Fukunaga, Kaori, Kasamatsu, Akifumi

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Evaluation of Transmission Characteristics of 120-GHz-Band Close-Proximity Wireless Links Using Split-Ring-Resonator Absorber Integrated Planar Slot Antenna von HIRATA, Akihiko, SAIJO, Tubasa, KAWAMOTO, Yuma, NAGATSUMA, Tadao, WATANABE, Issei, SEKINE, Norihiko, KASAMATSU, Akifumi

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Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method von Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Mimura, Takashi, Matsui, Toshiaki, Suda, Yoshiyuki

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Low-Profile Terahertz Radar Based on Broadband Leaky-Wave Beam Steering von Murano, Kosuke, Watanabe, Issei, Kasamatsu, Akifumi, Suzuki, Safumi, Asada, Masahiro, Withayachumnankul, Withawat, Tanaka, Toshiyuki, Monnai, Yasuaki

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Super‐high‐frequency‐band injection‐locked two‐divider oscillator using thin‐film bulk acoustic resonator von Hara, Motoaki, Yano, Yuichiro, Takahashi, Yuki, Nishizawa, Toshio, Hara, Shinsuke, Kasamatsu, Akifumi, Ueda, Masanori, Ito, Hiroyuki, Ido, Tetsuya

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Ultrafast silicon threshold circuitry for chaotic laser time series von Wada, Kazuyuki, Hara, Shinsuke, Tanoi, Satoru, Kasamatsu, Akifumi, Otsuka, Yuta, Sekine, Kawori, Uchida, Atsushi, Naruse, Makoto

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Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth von Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Matsui, Toshiaki, Suda, Yoshiyuki

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Transmission Characteristics Control of 120 GHz-Band Bandstop Filter by Coupling Alignment-Free Lattice Pattern von HIRATA, Akihiko, ITAKURA, Koichiro, HIGASHIMOTO, Taiki, UEMURA, Yuta, NAGATSUMA, Tadao, TOMURA, Takashi, HIROKAWA, Jiro, SEKINE, Norihiko, WATANABE, Issei, KASAMATSU, Akifumi

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Control of surface flatness of Ge layers directly grown on Si (001) substrates by DC sputter epitaxy method von Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Mimura, Takashi, Matsui, Toshiaki, Suda, Yoshiyuki

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Control of 120-GHz-Band Split Ring Resonator Filter by Coupling Lattice Pattern Substrate von ITAKURA, Koichiro, HIRATA, Akihiko, SONODA, Masato, HIGASHIMOTO, Taiki, NAGATSUMA, Tadao, TOMURA, Takashi, HIROKAWA, Jiro, SEKINE, Norihiko, WATANABE, Issei, KASAMATSU, Akifumi

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See-through Detection and 3D Reconstruction Using Terahertz Leaky-Wave Radar Based on Sparse Signal Processing von Murata, Koji, Murano, Kosuke, Watanabe, Issei, Kasamatsu, Akifumi, Tanaka, Toshiyuki, Monnai, Yasuaki

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Ultrashort optical pulse source using Mach–Zehnder-modulator-based flat comb generator von Morohashi, Isao, Sakamoto, Takahide, Sekine, Norihiko, Kasamatsu, Akifumi, Hosako, Iwao

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Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method von Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Mimura, Takashi, Matsui, Toshiaki, Suda, Yoshiyuki

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