Optical and material properties of sandwiched Si/SiGe/Si heterostructures von Feng, Z.C., Yu, J.W., Zhao, J., Yang, T.R., Karunasiri, R.P.G., Lu, W., Collins, W.E.

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Intersubband absorption in Si1-xGex/Si and δ-dope Si multiple quantum wells von Wang, Kang L., Karunasiri, R.P.G., Park, J.S.

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Observation of large oscillator strengths for both 1 r arrow 2 and 1 r arrow 3 intersubband transitions of step quantum wells von Mii, Y.J., Wang, K.L., Karunasiri, R.P.G., Yuh, P.F.

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MBE Si mGe n strained monolayer superlattices von Kallel, M.A., Arbet-Engels, V., Wang, K.L., Karunasiri, R.P.G.

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Study of hole miniband transport in Ge/sub x/Si/sub 1-x//Si superlattice von Karunasiri, R.P.G., Park, J.S., Wang, K.L., Yuh, F.P.

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Optical and material properties of sandwiched Si/SiGe/Si heterostructures von Feng, Z.C, Yu, J.W, Zhao, J, Yang, T.R, Karunasiri, R.P.G, Lu, W, Collins, W.E

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Field ionization IR spectroscopy of shallow impurity levels von Coon, D.D., Gunapala, S.D., Karunasiri, R.P.G., Muehlhoff, H.-M.

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Long Wavelength (10 /spl mu/m) Infrared Detector Using Si/sub 1-x/Ge/sub x/Si Multiple Quantum Wells von Karunasiri, R.P.G., Park, J.S., Wang, K.L.

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Theoretical and experimental studies on the improvement of the response of n-type III-V QWIPs to TE mode infrared radiation von Cheah, C.W., Tan, L.S., Karunasiri, R.P.G.

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Correlation of film thickness and deposition temperature with PAI and the scalability of Ti-salicide technology to sub-0.18 /spl mu/m regime von Ho, C.S., Karunasiri, R.P.G., Chua, S.J., Pey, K.L., Siah, S.Y., Lee, K.H., Chan, L.H.

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Infrared absorption in parabolic multiquantum well structures von Karunasiri, R.P.G., Wang, K.L.

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Pulsed laser salicidation for fabrication of ultra-thin silicides in sub-quarter micron devices von LU, YONG FENG, HO, CHAW SING, CHAN, LAP, KARUNASIRI, R.P.G, LEE, YUAN PING

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