Segregation and activation of Ga in high Ge content SiGe by UV melt laser anneal von Tabata, Toshiyuki, Aubin, Joris, Huet, Karim, Mazzamuto, Fulvio

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Segregation and activation of Sb implanted in Si by UV nanosecond-laser-anneal-induced non-equilibrium solidification von Tabata, Toshiyuki, Raynal, Pierre-Edouard, Huet, Karim, Everaert, Jean-Luc

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Surface segregated Ga, In, and Al activation in high Ge content SiGe during UV melt laser induced non-equilibrium solidification von Tabata, Toshiyuki, Huet, Karim, Mazzamuto, Fulvio, La Magna, Antonino

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Multiscale modeling of ultrafast melting phenomena von Calogero, Gaetano, Raciti, Domenica, Acosta-Alba, Pablo, Cristiano, Fuccio, Deretzis, Ioannis, Fisicaro, Giuseppe, Huet, Karim, Kerdilès, Sébastien, Sciuto, Alberto, La Magna, Antonino

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Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current von Shayesteh, Maryam, O'Connell, Dan, Gity, Farzan, Murphy-Armando, Philip, Ran Yu, Huet, Karim, Toque-Tresonne, Ines, Cristiano, Fuccio, Boninelli, Simona, Henrichsen, Henrik Hartmann, Nielsen, Peter Folmer, Petersen, Dirch Hjorth, Duffy, Ray

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Excimer laser annealing for low-voltage power MOSFET von Chen, Yi, Okada, Tatsuya, Noguchi, Takashi, Mazzamuto, Fulvio, Huet, Karim

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3D Simulation for Melt Laser Anneal Integration in FinFET's Contact von Tabata, Toshiyuki, Curvers, Benoit, Huet, Karim, Chew, Soon Aik, Everaert, Jean-Luc, Horiguchi, Naoto

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Atomically Flat Low-Resistive Germanide Contacts Formed by Laser Thermal Anneal von Shayesteh, M., Huet, K., Toque-Tresonne, I., Negru, R., Daunt, C. L. M., Kelly, N., O'Connell, D., Yu, R., Djara, V., Carolan, P. B., Petkov, N., Duffy, R.

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Strain Evaluation of Laser-Annealed SiGe Thin Layers von Komago, Shota, Murakami, Tatsumi, Yoshioka, Kazutoshi, Yokogawa, Ryo, Borland, John O, Kuroi, Takashi, Tabata, Toshiyuki, Huet, Karim, Horiguchi, Naoto, Ogura, Atsushi

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Doping of semiconductor devices by Laser Thermal Annealing von Huet, Karim, Mazzamuto, Fulvio, Tabata, Toshiyuki, Toqué-Tresonne, Ines, Mori, Yoshihiro

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Non-doped HfO 2 crystallization controlled by dwell time in laser annealing von Tabata, Toshiyuki, Halty, Sebastien, Rozé, Fabien, Huet, Karim, Mazzamuto, Fulvio

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Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing von Fisicaro, Giuseppe, Pelaz, Lourdes, Aboy, Maria, Lopez, Pedro, Italia, Markus, Huet, Karim, Cristiano, Filadelfo, Essa, Zahi, Yang, Qui, Bedel-Pereira, Elena, Quillec, Maurice, La Magna, Antonino

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Non-Equilibrium Growth of Surface Wrinkles Emerging in an SiO 2 /Si Stack during Si Melting Induced by UV Nanosecond Pulsed Laser Annealing von Karmous, Imen, Rozé, Fabien, Raynal, Pierre-Edouard, Huet, Karim, Alba, Pablo Acosta, Tabata, Toshiyuki, Kerdilès, Sébastien

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Non-doped HfO2 crystallization controlled by dwell time in laser annealing von Tabata, Toshiyuki, Halty, Sebastien, Rozé, Fabien, Huet, Karim, Mazzamuto, Fulvio

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Overview of Ruthenium Thin Films Annealed by Microsecond Scanning UV Pulsed Laser: Structural, Electrical, and Failure Modes Analysis von Daubriac, Richard, Cancellara, Leonardo, Chehadi, Zeinab, Lu, Lu, Thuries, Louis, Khaled, Mohamed Ali, Roze, Fabien, Jourdan, Nicolas, Tokei, Zsolt, Descamps‐Mandine, Armel, Hungria, Teresa, Fazzini, Pier‐Francesco, Tabata, Toshiyuki, Huet, Karim

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Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities von Monflier, R., Tabata, T., Rizk, H., Roul, J., Huet, K., Mazzamuto, F., Acosta Alba, P., Kerdilès, S., Boninelli, S., La Magna, A., Scheid, E., Cristiano, F., Bedel-Pereira, E.

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Microsecond non-melt UV laser annealing for future 3D-stacked CMOS von Tabata, Toshiyuki, Rozé, Fabien, Thuries, Louis, Halty, Sebastien, Raynal, Pierre-Edouard, Huet, Karim, Mazzamuto, Fulvio, Joshi, Abhijeet, Basol, Bulent M., Alba, Pablo Acosta, Kerdilès, Sébastien

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Dopant Redistribution and Activation in Ga Ion-Implanted High Ge Content SiGe by Explosive Crystallization during UV Nanosecond Pulsed Laser Annealing von Tabata, Toshiyuki, Karim, Huet, Rozé, Fabien, Mazzamuto, Fulvio, Sermage, Bernard, Kopalidis, Petros, Roh, Dwight

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Wrinkles Emerging in SiO 2 /Si Stack during UV Nanosecond Laser Anneal von Karmous, Imen, Roze, Fabien, Raynal, Pierre-Edouard, Huet, Karim, Acosta Alba, Pablo, Tabata, Toshiyuki, Kerdiles, Sebastien

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Non-Equilibrium Growth of Surface Wrinkles Emerging in an SiO2/Si Stack during Si Melting Induced by UV Nanosecond Pulsed Laser Annealing von Karmous, Imen, Rozé, Fabien, Raynal, Pierre-Edouard, Huet, Karim, Alba, Pablo Acosta, Tabata, Toshiyuki, Kerdilès, Sébastien

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