Fibonacci terahertz imaging by silicon diffractive optics von Jokubauskis, D, Minkevičius, L, Karaliūnas, M, Indrišiūnas, S, Kašalynas, I, Račiukaitis, G, Valušis, G

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Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers von P kien, S, Karali nas, M, Jasinskas, A, Dudutien, E, echavi ius, B, Devenson, J, Butkut, R, Udal, A, Valušis, G

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Examination of Photoluminescence Temperature Dependencies in N-B Co-doped 6H-SiC von Gavryushin, V, Gulbinas, K, Grivickas, V, Karaliūnas, M, Stasiūpnas, M, Jokubavičius, V, Sun, J W, Syväjärvi, M

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Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC von Grivickas, V, Gulbinas, K, Jokubavičius, V, Sun, J W, Karaliūnas, M, Kamiyama, S, Linnarsson, M, Kaiser, M, Wellmann, P, Syväjärvi, M

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Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes von Hoffmann, V., Knauer, A., Brunner, F., Netzel, C., Zeimer, U., Einfeldt, S., Weyers, M., Tränkle, G., Karaliunas, J.M., Kazlauskas, K., Jursenas, S., Jahn, U., van Look, J.R., Kneissl, M.

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On Applicability of Time-Resolved Optical Techniques for Characterization of Differently Grown 3C-SiC Crystals and Heterostructures von Syväjärvi, Mikael, Jegenyes, Nikoletta, Kato, Masashi, Vasiliauskas, Remigijus, Yakimova, Rositza, Nargelas, Saulius, Ferro, Gabriel, Lorenzzi, Jean, Manolis, Georgios, Jarašiūnas, Kęstutis, Karaliūnas, Mindaugas, Onufrijevs, Pavels, Ščajev, Patrik, Beshkova, Milena

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Characterization of Nepali solid-state lamps/Nepale pagamintu kietakuniu sviestuvu charakterizavimas von Karaliunas, M, Vitta, P, Zukauskas, A, Zahnd, A, Bista, D, Chhetri, B.B, Updhyaya, M.R

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Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC

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Band tail filling effect in MBE-grown ternary MgZnO epitaxial layers with high Mg content von Karaliūnas, Mindaugas, Šukauskas, Vilmantas, Kuokštis, Edmundas, Ting, Shao-Ying, Huang, Jeng-Jie, Yang, C.-C.

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