Detecting defects that reduce breakdown voltage using machine learning and optical profilometry von Gallagher, James C., Mastro, Michael A., Jacobs, Alan G., Kaplar, Robert. J., Hobart, Karl D., Anderson, Travis J.

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Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices von Coltrin, Michael E., Kaplar, Robert J.

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An AlN/Al0.85Ga0.15N high electron mobility transistor von Baca, Albert G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica A., Sanchez, Carlos A., King, Michael P., Coltrin, Michael E., Fortune, Torben R., Kaplar, Robert J.

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Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques von Gallagher, James C., Ebrish, Mona A., Porter, Matthew A., Jacobs, Alan G., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Anderson, Travis J.

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Using machine learning with optical profilometry for GaN wafer screening von Gallagher, James C., Mastro, Michael A., Ebrish, Mona A., Jacobs, Alan G., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Anderson, Travis J.

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Ultrawide-bandgap semiconductors: An overview von Wong, Man Hoi, Bierwagen, Oliver, Kaplar, Robert J., Umezawa, Hitoshi

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Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs von DasGupta, S., Min Sun, Armstrong, A., Kaplar, R. J., Marinella, M. J., Stanley, J. B., Atcitty, S., Palacios, T.

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Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors von Carey, Patrick H., Pearton, Stephen J., Ren, Fan, Baca, Albert G., Klein, Brianna A., Allerman, Andrew A., Armstrong, Andrew M., Douglas, Erica A., Kaplar, Robert J., Kotula, Paul G.

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High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study von Reza, Shahed, Klein, Brianna A., Baca, Albert. G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica. A., Kaplar, Robert J.

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Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors von Carey, Patrick H., Pearton, Stephen J., Ren, Fan, Baca, Albert G., Klein, Brianna A., Allerman, Andrew A., Armstrong, Andrew M., Douglas, Erica A., Kaplar, Robert J., Kotula, Paul G.

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A discussion on various experimental methods of impact ionization coefficient measurement in GaN von Ji, Dong, Zeng, Ke, Bian, Zhengliang, Shankar, Bhawani, Gunning, Brendan P., Binder, Andrew, Dickerson, Jeramy R., Aktas, Ozgur, Anderson, Travis J., Kaplar, Robert J., Chowdhury, Srabanti

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Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination von Ebrish, Mona, Porter, Matthew, Jacobs, Alan, Gallagher, James, Kaplar, Robert, Gunning, Brendan, Hobart, Karl, Anderson, Travis

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A Review of GaN HEMT Dynamic ON-Resistance and Dynamic Stress Effects on Field Distribution von Gill, Lee, DasGupta, Sandeepan, Neely, Jason C., Kaplar, Robert J., Michaels, Alan J.

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Al-rich AlGaN based transistors von Baca, Albert G., Armstrong, Andrew M., Klein, Brianna A., Allerman, Andrew A., Douglas, Erica A., Kaplar, Robert J.

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Vertical GaN Power Diodes With a Bilayer Edge Termination von Dickerson, Jeramy R., Allerman, Andrew A., Bryant, Benjamin N., Fischer, Arthur J., King, Michael P., Moseley, Michael W., Armstrong, Andrew M., Kaplar, Robert J., Kizilyalli, Isik C., Aktas, Ozgur, Wierer, Jonathan J.

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Optimization of Step-Etched Junction Termination Extensions for Vertical GaN Devices von Binder, Andrew T., Steinfeldt, Jeffrey, Allerman, Andrew A., Rummel, Brian D., Glaser, Caleb, Yates, Luke, Kaplar, Robert J.

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Microstructural evolution of extended defects in 25 μm thick GaN homo-epitaxial layers von Liao, Michael E., Mahadik, Nadeemullah A., Gallagher, James C., Gunning, Brendan P., Kaplar, Robert J., Anderson, Travis J.

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RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm Gates von Baca, Albert G., Klein, Brianna A., Wendt, Joel R., Lepkowski, Stefan M., Nordquist, Christopher D., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica A., Kaplar, Robert J.

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A Simple Edge Termination Design for Vertical GaN P-N Diodes von Pandey, Prakash, Nelson, Tolen M., Collings, William M., Hontz, Michael R., Georgiev, Daniel G., Koehler, Andrew D., Anderson, Travis J., Gallagher, James C., Foster, Geoffrey M., Jacobs, Alan, Ebrish, Mona A., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Khanna, Raghav

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Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor von Lundh, James Spencer, Chatterjee, Bikramjit, Song, Yiwen, Baca, Albert G., Kaplar, Robert J., Beechem, Thomas E., Allerman, Andrew A., Armstrong, Andrew M., Klein, Brianna A., Bansal, Anushka, Talreja, Disha, Pogrebnyakov, Alexej, Heller, Eric, Gopalan, Venkatraman, Redwing, Joan M., Foley, Brian M., Choi, Sukwon

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