High voltage and high current density vertical GaN power diodes von Armstrong, A.M, Allerman, A.A, Fischer, A.J, King, M.P, van Heukelom, M.S, Moseley, M.W, Kaplar, R.J, Wierer, J.J, Crawford, M.H, Dickerson, J.R

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Al0.3Ga0.7N PN diode with breakdown voltage >1600 V von Allerman, A.A, Armstrong, A.M, Fischer, A.J, Dickerson, J.R, Crawford, M.H, King, M.P, Moseley, M.W, Wierer, J.J, Kaplar, R.J

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Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes von Vizkelethy, G., King, M.P., Aktas, O., Kizilyalli, I.C., Kaplar, R.J.

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Al 0 .3 Ga 0.7 N PN diode with breakdown voltage >1600 V von Allerman, A.A., Armstrong, A.M., Fischer, A.J., Dickerson, J.R., Crawford, M.H., King, M.P., Moseley, M.W., Wierer, J.J., Kaplar, R.J.

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Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III–V solar cells von Kaplar, R.J., Kwon, D., Ringel, S.A., Allerman, A.A., Kurtz, Steven R., Jones, E.D., Sieg, R.M.

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Anomalous drain voltage dependence in bias temperature instability measurements on high-κ field effect transistors von Mee, J.K., Devine, R.A.B., Trombetta, L., Kaplar, R.J., Gouker, P.

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AlGaN High Electron Mobility Transistor for High Temperature Logic von Klein, B.A., Allerman, A.A., Baca, A.G., Nordquist, C.D, Armstrong, A.M., Van Heukelom, M., Rice, A., Patel, V., Rosprim, M., Caravello, L., DeBerry, R., Pipkin, J.R., Abate, V.M., Kaplar, R.J.

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Recent advances in AlGaN-based deep-UV LEDs von Crawford, M.H., Fischer, A.J., Allerman, A.A., Bogart, K.H.A., Lee, S.R., Kaplar, R.J., Chow, W.W.

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