Familial occurrence of Dyke-Davidoff-Masson syndrome in two African siblings with unexplained parotid enlargement von Musoni-Rwililiza E, Moshi C, Sebera F, Silverstein A, Harris R. D, Kanyandekwe S, Levy-Carrick N. C

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PMH67 USING REAL WORLD DATA TO PROFILE CURRENT STANDARD OF CARE FOR SCHIZOPHRENIA PATIENTS AT A MENTAL HEALTH HOSPITAL IN RWANDA, AFRICA von Thomas, T., Ngirababyeyi, A., Mwaniki, K., Keenan, A., Iyamuremye, J.D., Smith-Swintosky, V., Kayiteshonga, Y., Rutakayire, B., Kanyandekwe, S.

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PMH13 ESTIMATING THE BENEFIT OF LONG-ACTING INJECTABLES FOR SCHIZOPHRENIA TREATMENT IN RWANDA USING A ONE-YEAR COST-CONSEQUENCE MODEL von Thomas, T., Keenan, A., Ngirababyeyi, A., Mwaniki, K., Iyamuremye, J.D., Smith-Swintosky, V., Abraham, E., Kayiteshonga, Y., Rutakayire, B., Kanyandekwe, S.

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Continuing Professional Development Program in Health Facilities in Rwanda: A Qualitative Study on the Perceptions of Health Professionals von Munyaneza, Emmanuel, Rugwizangoga, Belson, Rusingiza, Emmanuel, Niyibizi, Jean Berchmans, Kanyandekwe, Simon Rutayisire, Byiringiro, Jean Claude, Masaisa, Florence

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Extraction of stress and dislocation density using in-situ curvature measurements for AlGaN and GaN on silicon growth von Charles, Matthew, Mrad, Mrad, Kanyandekwe, Joël, Yon, Victor

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Low temperature epitaxy of tensile-strained Si:P von Hartmann, J.M., Kanyandekwe, J.

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Simple and Accurate Prediction of AlGaN Metal‐Organic Vapor Phase Epitaxy Growth von Charles, Matthew, Kanyandekwe, Joël, Lafossas, Matthieu

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The effect of AlN nucleation temperature on inverted pyramid defects in GaN layers grown on 200 mm silicon wafers von Charles, Matthew, Baines, Yannick, Bos, Sandra, Escoffier, René, Garnier, Gennie, Kanyandekwe, Joël, Lebreton, Julie, Vandendaele, William

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Understanding and controlling Ga contamination in InAlN barrier layers von Mrad, M., Charles, M., Mazel, Y., Nolot, E., Kanyandekwe, J., Veillerot, M., Ferret, P., Feuillet, G.

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A Review of Low Temperature Process Modules Leading Up to the First (≤500 °C) Planar FDSOI CMOS Devices for 3-D Sequential Integration von Fenouillet-Beranger, C., Brunet, L., Batude, P., Brevard, L., Garros, X., Casse, M., Lacord, J., Sklenard, B., Acosta-Alba, P., Kerdiles, S., Tavernier, A., Vizioz, C., Besson, P., Gassilloud, R., Pedini, J.-M., Kanyandekwe, J., Mazen, F., Magalhaes-Lucas, A., Cavalcante, C., Bosch, D., Ribotta, M., Lapras, V., Vinet, M., Andrieu, F., Arcamone, J.

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Low Temperature Cyclic Deposition/Etch (CDE) of Tensile-Strained Si:P von Hartmann, Jean-Michel, Kanyandekwe, Joël, Richy, Jérôme, Veillerot, Marc

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Gap Analysis of Organizational Culture and Performance in Valley View University, Ghana von Konadu, Joseph Sarpong, Kanyandekwe, Samuel

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Impact of growth conditions on AlN/GaN heterostructures with in-situ SiN capping layer von Kanyandekwe, Joël, Baines, Yannick, Richy, Jérôme, Favier, Sylvie, Leroux, Charles, Blachier, Denis, Mazel, Yann, Veillerot, Marc, Barnes, Jean-Paul, Mrad, Mrad, Wiese, Cindy, Charles, Matthew

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Solving the problem of gallium contamination problem in InAlN layers in close coupled showerhead reactors von Mrad, Mrad, Mazel, Yann, Kanyandekwe, Joel, Bouveyron, Romain, Feuillet, Guy, Charles, Matthew

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Working towards health: A model of cervical cancer screening and treatment for factory employees in Haiti von DeGennaro, Jr, Vincent, Henderson, Rebecca R, Petterson, Cynthia, Wilson, Corey, Kanyandekwe, Delphine, Fujii, Yui, Guerrero-Preston, Rafael, Louis, Nanotte, Elie, Marie-Carmelle, McKenzie, Nathalie

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Unravelling the unwanted Ga incorporation effect on InGaN epilayers grown in CCS MOVPE reactors von Mrad, Mrad, Licitra, Christophe, Dussaigne, Amélie, Yon, Victor, Richy, Jérôme, Lafossas, Matthieu, Kanyandekwe, Joel, Feuillet, Guy, Charles, Matthew

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(Invited) Epitaxy of GaN on Si (111) for Power Electronics, RF and LEDs von Charles, Matthew, Kanyandekwe, Joël, Bos, Sandra, Baines, Yannick, Morvan, Erwan, Torres, Alphonse, Templier, François, Plissonnier, Marc

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Selective Epitaxial Growth of SiGe(:B) for Advanced p-Type Fd-SOI von Lespiaux, Justine, Kanyandekwe, Joël, Marion, Tanguy, Saidi, Lazhar, Lapras, Valérie, Bond, Alice, Bringuier, Fabien, Richy, Jérôme, Thouvard, Alan, Biet, Tim, Nolot, Emmanuel, Couture, Ludovic, Brunet, Laurent, Rodriguez, Philippe, Dos Reis, Eva, Gauthier, Nicolas, Blot-Saby, Adrien, Hartmann, Jean-Michel

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The effect of AlN nucleation temperature on inverted pyramid defects in GaN layers grown on 200mm silicon wafers von Charles, Matthew, Baines, Yannick, Bos, Sandra, Escoffier, René, Garnier, Gennie, Kanyandekwe, Joël, Lebreton, Julie, Vandendaele, William

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Thermal Evolution of Implantation Damages in Mg-Implanted GaN Layers Grown on Si von Lardeau-Falcy, Aurélien, Coig, Marianne, Charles, Matthew, Licitra, Christophe, Kanyandekwe, Joël, Milesi, Frederic, Eymery, Joel, Mazen, Frédéric

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