GaAs/GaAsPBi core–shell nanowires grown by molecular beam epitaxy von Himwas, C, Yordsri, V, Thanachayanont, C, Tchernycheva, M, Panyakeow, S, Kanjanachuchai, S

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GaAsPBi epitaxial layer grown by molecular beam epitaxy von Himwas, C, Soison, A, Kijamnajsuk, S, Wongpinij, T, Euaraksakul, C, Panyakeow, S, Kanjanachuchai, S

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Optical properties of lattice-matched GaAsPBi multiple quantum wells grown on GaAs (001) von Himwas, C., Kijamnajsuk, S., Yordsri, Thanachayanont, C., Wongpinij, T., Euaruksakul, C., Panyakeow, S., Kanjanachuchai, S.

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Study on Raman spectroscopy of InSb nano-stripes grown on GaSb substrate by molecular beam epitaxy and their Raman peak shift with magnetic field von Lekwongderm, P., Chumkaew, R., Thainoi, S., Kiravittaya, S., Tandaechanurat, A., Nuntawong, N., Sopitpan, S., Yordsri, V., Thanachayanont, C., Kanjanachuchai, S., Ratanathammaphan, S., Panyakeow, Somsak

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Molecular beam epitaxial growth of interdigitated quantum dots for heterojunction solar cells von Chevuntulak, C., Rakpaises, T., Sridumrongsak, N., Thainoi, S., Kiravittaya, S., Nuntawong, N., Sopitpan, S., Yordsri, V., Thanachayanont, C., Kanjanachuchai, S., Ratanathammaphan, S., Tandaechanurat, A., Panyakeow, S.

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InSb/InAs quantum nano-stripes grown by molecular beam epitaxy and its photoluminescence at mid-infrared wavelength von Srisinsuphya, P., Rongrueangkul, K., Khanchaitham, R., Thainoi, S., Kiravittaya, S., Nuntawong, N., Sopitpan, S., Yordsri, V., Thanachayanont, C., Kanjanachuchai, S., Ratanathammaphan, S., Tandaechanurat, A., Panyakeow, S.

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Polarization anisotropy of stacked InAs quantum dots on InGaAs/GaAs cross-hatch patterns von Chokamnuai, T., Rattanadon, P., Thainoi, S., Panyakeow, S., Kanjanachuchai, S.

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Self-assembled InAs quantum dots on anti-phase domains of GaAs on Ge substrates von Tantiweerasophon, W., Thainoi, S., Changmuang, P., Kanjanachuchai, S., Rattanathammaphan, S., Panyakeow, S.

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Bimodal optical characteristics of lateral InGaAs quantum dot molecules von Thongkamkoon, N., Patanasemakul, N., Siripitakchai, N., Thainoi, S., Panyakeow, S., Kanjanachuchai, S.

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Optimization of stacking high-density quantum dot molecules for photovoltaic effect von Laouthaiwattana, K., Tangmattajittakul, O., Suraprapapich, S., Thainoi, S., Changmuang, P., Kanjanachuchai, S., Ratanathamaphan, S., Panyakeow, S.

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Extended optical properties beyond band-edge of GaAs by InAs quantum dots and quantum dot molecules von Tangmettajittakul, O., Thainoi, S., Changmoang, P., Kanjanachuchai, S., Rattanathammaphan, S., Panyakeow, S.

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Self-assembled InAs quantum dots on cross-hatch InGaAs templates: Excess growth, growth rate, capping and preferential alignment von Kanjanachuchai, S., Maitreeboriraks, M., Thet, C.C., Limwongse, T., Panyakeow, S.

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Evolution of InAs quantum dots grown on cross-hatch substrates von Limwongse, T., Panyakeow, S., Kanjanachuchai, S.

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Temperature-dependent photoluminescent characteristics of lateral InGaAs quantum dot molecules von Kanjanachuchai, S., Thudsalingkarnsakul, N., Siripitakchai, N., Changmoang, P., Thainoi, S., Panyakeow, S.

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Effective one-dimensional electronic structure of InGaAs quantum dot molecules von Thudsalingkarnsakul, N., Limwongse, T., Siripitakchai, N., Panyakeow, S., Kanjanachuchai, S.

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Growth of InAs quantum-dot hatches on InGaAs/GaAs cross-hatch virtual substrates von Thet, C.C., Panyakeow, S., Kanjanachuchai, S.

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The effects of relaxed InGaAs virtual substrates on the formation of self-assembled InAs quantum dots von Thet, C C, Sanorpim, S, Panyakeow, S, Kanjanachuchai, S

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Evolution of self-assembled lateral quantum dot molecules von Siripitakchai, N., Suraprapapich, S., Thainoi, S., Kanjanachuchai, S., Panyakeow, S.

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Aligned quantum dot molecules with 4 satellite dots by self-assembly von Siripitakchai, N., Thet, C.C., Panyakeow, S., Kanjanachuchai, S.

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Self-assembled lateral InAs quantum dot molecules: Dot ensemble control and polarization-dependent photoluminescence von Suraprapapich, S., Kanjanachuchai, S., Thainoi, S., Panyakeow, S.

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