Fermi pinning-induced thermal instability of metal-gate work functions von Yu, H.Y., Ren, C., Yee-Chia Yeo, Kang, J.F., Wang, X.P., Ma, H.H.H., Ming-Fu Li, Chan, D.S.H., Kwong, D.-L.

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A unified physical model of switching behavior in oxide-based RRAM von Xu, N., Gao, B., Liu, L.F., Bing Sun, Liu, X.Y., Han, R.Q., Kang, J.F., Yu, B.

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Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in $hbox TaN/SiO_2$ Gate Stack von Ren, C., Yu, H.Y., Kang, J.F., Hou, Y.T., Li, M.-F., Wang, W.D., Chan, D.S.H., Kwong, D.-L.

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Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology von Gao, B., Zhang, H.W., Yu, S., Sun, B., Liu, L.F., Liu, X.Y., Wang, Y., Han, R.Q., Kang, J.F., Yu, B., Wang, Y.Y.

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Robust High-Quality HfN–>tex<$hbox HfO_2$>/tex<Gate Stack for Advanced MOS Device Applications von Yu, H.Y., Kang, J.F., Ren, C., Chen, J.D., Hou, Y.T., Shen, C., Li, M.F., Chan, D.S.H., Bera, K.L., Tung, C.H., Kwong, D.-L.

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Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures von Iglesias, V., Lanza, M., Bayerl, A., Porti, M., Nafría, M., Aymerich, X., Liu, L.F., Kang, J.F., Bersuker, G., Zhang, K., Shen, Z.Y.

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Oxide-based RRAM switching mechanism: A new ion-transport-recombination model von Gao, B., Yu, S., Xu, N., Liu, L.F., Sun, B., Liu, X.Y., Han, R.Q., Kang, J.F., Yu, B., Wang, Y.Y.

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A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gate von Ren, C, Yu, H.Y, Kang, J.F, Wang, X.P, Ma, H.H.H, Yeo, Yee-Chia, Chan, D.S.H, Li, M.-F, Kwong, D.-L

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Fermi-level pinning induced thermal instability in the effective work function of TaN in TaN/SiO2 gate stack von Ren, C, Yu, H.Y, Kang, J.F, Hou, Y.T, Li, M.-F, Wang, W.D, Chan, D.S.H, Kwong, D.-L

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The influence of hydrogen annealing on magnetism of Co-doped TiO2 films prepared by sol-gel method von LIU, L. F, KANG, J. F, WANG, Y, TANG, H, KONG, L. G, SUN, L, ZHANG, X, HAN, R. Q

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Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting traps von SA, N, KANG, J. F, YANG, H, LIU, X. Y, HE, Y. D, HAN, R. Q, REN, C, YU, H. Y, CHAN, D. S. H, KWONG, D.-L

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The influence of hydrogen annealing on magnetism of Co-doped TiO 2 films prepared by sol–gel method von Liu, L.F., Kang, J.F., Wang, Y., Tang, H., Kong, L.G., Sun, L., Zhang, X., Han, R.Q.

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The role of oxygen vacancies in magnetism of CoxTi1-xO2-δ films on Si(001) prepared by sol-gel method von LIU, L. F, KANG, J. F, WANG, Y, TANG, H, KONG, L. G, ZHANG, X, HAN, R. Q

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SILC-based reassignment of trapping and trap generation regimes of positive bias temperature instability von Yang, J Q, Masuduzzman, M, Kang, J F, Alam, M A

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Robust high-quality HfN-HfO2 gate stack for advanced MOS device applications von Yu, H.Y, Kang, J.F, Ren, C, Chen, J.D, Hou, Y.T, Shen, C, Li, M.F, Chan, D.S.H, Bera, K.L, Tung, C.H, Kwong, D.-L

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The role of oxygen vacancies in magnetism of Co x Ti 1− x O 2−δ films on Si(001) prepared by sol–gel method von Liu, L.F., Kang, J.F., Wang, Y., Tang, H., Kong, L.G., Zhang, X., Han, R.Q.

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Improved electrical and reliability characteristics of HfN-HfO2-Gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process von KANG, J. F, YU, H. Y, HAN, R. Q, KWONG, D.-L, REN, C, WANG, X. P, LI, M.-F, CHAN, D. S. H, YEO, Y.-C, SA, N, YANG, H, LIU, X. Y

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Fermi-level pinning induced thermal instability in the effective work function of TaN in TaN/SiO/sub 2/ gate stack von Ren, C., Yu, H.Y., Kang, J.F., Hou, Y.T., Li, M.-F., Wang, W.D., Chan, D.S.H., Kwong, D.-L.

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Physical mechanisms of endurance degradation in TMO-RRAM von Chen, B., Lu, Y., Gao, B., Fu, Y. H., Zhang, F. F., Huang, P., Chen, Y. S., Liu, L. F., Liu, X. Y., Kang, J. F., Wang, Y. Y., Fang, Z., Yu, H. Y., Li, X., Wang, X. P., Singh, N., Lo, G. Q., Kwong, D. L.

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A Dual-Metal Gate Integration Process for CMOS With Sub-1-nm EOT $hbox HfO_2$ by Using HfN Replacement Gate von Ren, C., Yu, H.Y., Kang, J.F., Wang, X.P., Ma, H.H.H., Yeo, Y.-C., Chan, D.S.H., Li, M.-F., Kwong, D.-L.

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