The effect of silicon doping in the selected barrier on the electroluminescence of InGaN∕GaN multiquantum well light emitting diode von Park, Eun-Hyun, Kang, David Nicol Hun, Ferguson, Ian T., Park, Soo-Kun Jeon Joong-Seo, Yoo, Tae-Kyung

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The effect of silicon doping in the selected barrier on the electroluminescence of In Ga N ∕ Ga N multiquantum well light emitting diode von Park, Eun-Hyun, Kang, David Nicol Hun, Ferguson, Ian T., Park, Soo-Kun Jeon Joong-Seo, Yoo, Tae-Kyung

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Broadband spectrally dynamic solid state illumination source von Nicol, David B., Asghar, Ali, Gupta, Shalini, Kang, Hun, Pan, Ming, Strassburg, Martin, Summers, Chris, Ferguson, Ian T.

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Investigation of molecular co-doping for low ionization energy p-type centers in GaN von Payne, Adam M., Nicol, David, Kang, Hun, Tran, My, Mehta, Dhairya, Moore, Stephen, Ferguson, Ian

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