Characteristics of Ion-Induced Bending Phenomenon von Yoshida, Tomoya, Nagao, Masayoshi, Kanemaru, Seigo

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Ion induced bending (IIB) phenomenon for 3-D structure fabrication von Yoshida, Tomoya, Nagao, Masayoshi, Kanemaru, Seigo

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Work function uniformity of Al–Ni alloys obtained by scanning Maxwell-stress microscopy as an effective tool for evaluating metal transistor gates von Matsukawa, Takashi, Yasumuro, Chiaki, Yamauchi, Hiromi, Masahara, Meishoku, Suzuki, Eiichi, Kanemaru, Seigo

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CHF 3 Plasma Treatment of Si Field Emitter Arrays For No Damage Vacuum Packaging von Masayoshi Nagao, Masayoshi Nagao, Hisao Tanabe, Hisao Tanabe, Takashi Matsukawa, Takashi Matsukawa, Seigo Kanemaru, Seigo Kanemaru, Junji Itoh, Junji Itoh

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Fabrication and characterization of vertical-type, self-aligned asymmetric double-gate metal-oxide-semiconductor field-effect-transistors von Masahara, Meishoku, Liu, Yongxun, Ishii, Kenichi, Sakamoto, Kunihiro, Matsukawa, Takashi, Tanoue, Hisao, Kanemaru, Seigo, Suzuki, Eiichi

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Air-bridge-structured silicon nanowire and anomalous conductivity von Fujii, Hideo, Kanemaru, Seigo, Matsukawa, Takashi, Itoh, Junji

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Fabrication of field emitter arrays with hydrogenated amorphous silicon on glass von GAMO, H, KANEMARU, S, ITOH, J

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Diagnostics of doping integrity in n+/p/n+ transistor-channel structure by scanning nonlinear dielectric microscopy von Matsukawa, Takashi, Yasumuro, Chiaki, Masahara, Meishoku, Tanoue, Hisao, Kanemaru, Seigo

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Ultrastable emission from a metal–oxide–semiconductor field-effect transistor-structured Si emitter tip von Itoh, Junji, Hirano, Takayuki, Kanemaru, Seigo

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Fabrication of silicon field emitter arrays integrated with beam focusing lens von YAMAOKA, Y, KANEMARU, S, ITOH, J

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Feasibility of vacuum microelectronics voltage comparator von PY, C, ITOH, J, KANEMARU, S

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Modeling of Focused Carbon Nanotube Array Emitters for Field-Emission Displays von Nicolaescu, Dan, Filip, Lucian Dragos, Kanemaru, Seigo, Itoh, Junji

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Characterization of electrical conduction in silicon nanowire by scanning Maxwell-stress microscopy von Fujii, Hideo, Matsukawa, Takashi, Kanemaru, Seigo, Yokoyama, Hiroshi, Itoh, Junji

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Development of Thin-Film Bending Technique Induced by Ion-Beam Irradiation von Yoshida, Tomoya, Nagao, Masayoshi, Kanemaru, Seigo

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Fabrication of Si field emitter tip for a three-dimensional vacuum magnetic sensor von UEMURA, K, KANEMARU, S, ITOH, J

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Modeling of Optimized Field Emission Nanotriodes with Aligned Carbon Nanotubes of Variable Heights von Nicolaescu, Dan, Filip, Lucian Dragos, Kanemaru, Seigo, Itoh, Junji

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Control of emission currents from silicon field emitter arrays using a built-in MOSFET von Kanemaru, Seigo, Hirano, Takayuki, Tanoue, Hisao, Itoh, Junji

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General Analytical Relationship for Electric Field of Gated Field Emitters von Nicolaescu, Dan, Nagao, Masayoshi, Filip, Valeriu, Kanemaru, Seigo, Itoh, Junji

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Stable emission from a MOSFET-structured emitter tip in poor vacuum von Kanemaru, Seigo, Hirano, Takayuki, Honda, Kenichi, Itoh, Junji

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Fabrication of Polycrystalline Silicon Field Emitter Arrays with Hafnium Carbide Coating for Thin-Film-Transistor Controlled Field Emission Displays von Nagao, Masayoshi, Sacho, Yutaka, Sato, Takanobu, Matsukawa, Takashi, Kanemaru, Seigo, Itoh, Junji

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