Characteristics of Ion-Induced Bending Phenomenon von Yoshida, Tomoya, Nagao, Masayoshi, Kanemaru, Seigo

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Work function uniformity of Al–Ni alloys obtained by scanning Maxwell-stress microscopy as an effective tool for evaluating metal transistor gates von Matsukawa, Takashi, Yasumuro, Chiaki, Yamauchi, Hiromi, Masahara, Meishoku, Suzuki, Eiichi, Kanemaru, Seigo

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Fabrication and characterization of vertical-type, self-aligned asymmetric double-gate metal-oxide-semiconductor field-effect-transistors von Masahara, Meishoku, Liu, Yongxun, Ishii, Kenichi, Sakamoto, Kunihiro, Matsukawa, Takashi, Tanoue, Hisao, Kanemaru, Seigo, Suzuki, Eiichi

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Diagnostics of doping integrity in n+/p/n+ transistor-channel structure by scanning nonlinear dielectric microscopy von Matsukawa, Takashi, Yasumuro, Chiaki, Masahara, Meishoku, Tanoue, Hisao, Kanemaru, Seigo

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Fabrication of silicon field emitter arrays integrated with beam focusing lens von YAMAOKA, Y, KANEMARU, S, ITOH, J

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Modeling of Focused Carbon Nanotube Array Emitters for Field-Emission Displays von Nicolaescu, Dan, Filip, Lucian Dragos, Kanemaru, Seigo, Itoh, Junji

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Ion induced bending (IIB) phenomenon for 3-D structure fabrication von Yoshida, Tomoya, Nagao, Masayoshi, Kanemaru, Seigo

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Characterization of electrical conduction in silicon nanowire by scanning Maxwell-stress microscopy von Fujii, Hideo, Matsukawa, Takashi, Kanemaru, Seigo, Yokoyama, Hiroshi, Itoh, Junji

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Control of emission currents from silicon field emitter arrays using a built-in MOSFET von Kanemaru, Seigo, Hirano, Takayuki, Tanoue, Hisao, Itoh, Junji

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Fabrication of Si field emitter tip for a three-dimensional vacuum magnetic sensor von UEMURA, K, KANEMARU, S, ITOH, J

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General Analytical Relationship for Electric Field of Gated Field Emitters von Nicolaescu, Dan, Nagao, Masayoshi, Filip, Valeriu, Kanemaru, Seigo, Itoh, Junji

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Demonstration, analysis, and device design considerations for independent DG MOSFETs von Masahara, M., Yongxun Liu, Sakamoto, K., Endo, K., Matsukawa, T., Ishii, K., Sekigawa, T., Yamauchi, H., Tanoue, H., Kanemaru, S., Koike, H., Suzuki, E.

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Fabrication of HfC-Coated Si Field Emitter Arrays with Built-in Poly-Si Thin-Film Transistor von Nagao, Masayoshi, Sacho, Yutaka, Matsukawa, Takashi, Kanemaru, Seigo, Itoh, Junji

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Fabrication of a three-dimensional vacuum magnetic sensor with a Si tip von UEMURA, K, KANEMARU, S, ITOH, J

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Integration of thin film transistors and vertical thin film field emitter arrays using ion-induced bending von Yoshida, Tomoya, Nishi, Takashi, Nagao, Masayoshi, Shimizu, Takashi, Kanemaru, Seigo

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Emission Statistics for HfC Emitter Arrays after Residual Gas Exposure von Nicolaescu, Dan, Nagao, Masayoshi, Sato, Takanobu, Filip, Valeriu, Kanemaru, Seigo, Itoh, Junji

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CHF 3 Plasma Treatment of Si Field Emitter Arrays For No Damage Vacuum Packaging von Masayoshi Nagao, Masayoshi Nagao, Hisao Tanabe, Hisao Tanabe, Takashi Matsukawa, Takashi Matsukawa, Seigo Kanemaru, Seigo Kanemaru, Junji Itoh, Junji Itoh

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Feasibility of vacuum microelectronics voltage comparator von PY, C, ITOH, J, KANEMARU, S

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Fabrication of a Nanometer-Scale Si-Wire by Micromachining of a Silicon-on-Insulator Substrate von Fujii, Hideo, Kanemaru, Seigo, Matsukawa, Takashi, Hiroshima, Hiroshi, Yokoyama, Hiroshi, Itoh, Junji

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Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication von Masahara, Meishoku, Matsukawa, Takashi, Tanoue, Hisao, Ishii, Kenichi, Liu, Yongxun, Sakamoto, Kunihiro, Kanemaru, Seigo, Suzuki, Eiichi

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