Influence of the substrate lattice structure on the formation of quantum well states in thin In and Pb films on silicon von Dil, J H, Hülsen, B, Kampen, T U, Kratzer, P, Horn, K

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Correlation between barrier height and interface structure of Ag/Si(111) Schottky diodes von SCHMITSDORF, R. F, KAMPEN, T. U, MÖNCH, W

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Study of the interaction of tris-(8-hydroxyquinoline) aluminum (Alq 3) with potassium using vibrational spectroscopy: Examination of the possible isomerization upon K-doping von Sakurai, Y., Yokoyama, T., Hosoi, Y., Ishii, H., Ouchi, Y., Salvan, G., Kobitski, A., Kampen, T.U., Zahn, D.R.T., Seki, K.

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Surface analysis of 6HSiC von van Elsbergen, V., Kampen, T.U., Mönch, W.

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Structural and Morphological Properties of 3,4,9,10-PeryleneTetraCarboxylic DiAnhydride Films on Passivated GaAs(100) Substrates von Salvan, G., Silaghi, S., Paez, B., Kampen, T.U., Zahn, D.R. T.

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Optical properties and molecular orientation in organic thin films von Friedrich, M, Gavrila, G, Himcinschi, C, Kampen, T U, Kobitski, A Yu, Méndez, H, Salvan, G, Cerrilló, I, Méndez, J, Nicoara, N, Baró, A M, Zahn, D R T

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Quantum size effects in quasi-free-standing Pb layers von Dil, J. H., Kampen, T. U., Hülsen, B., Seyller, T., Horn, K.

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Copper phthalocyanine on InSb(111)A—interface bonding, growth mode and energy band alignment von Evans, D A, Steiner, H J, Evans, S, Middleton, R, Jones, T S, Park, S, Kampen, T U, Zahn, D R T, Cabailh, G, McGovern, I T

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Valence band discontinuity at the GaN/SiC(0 0 0 1) heterojunction studied in situ by synchrotron-radiation photoelectron spectroscopy von Chen, C.-H., Aballe, L., Klauser, R., Kampen, T.U., Horn, K.

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Interface properties of metal/cytosine/Si(1 1 1):H heterostructures studied by means of SERS and DFT von Silaghi, S.D., Salvan, G., Friedrich, M., Kampen, T.U., Scholz, R., Zahn, D.R.T.

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Interaction of metals with an organic semiconductor: Ag and In on PTCDA von Park, S., Kampen, T.U., Kachel, T., Bressler, P., Braun, W., Zahn, D.R.T.

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Transport gap of organic semiconductors in organic modified Schottky contacts von Zahn, Dietrich R.T., Kampen, Thorsten U., Méndez, Henry

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The interface formation of PTCDA on Se-modified GaAs(100) surfaces von Park, S., Querner, T., Kampen, T.U., Braun, W., Zahn, D.R.T.

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The influence of sulfur on the In/GaAs(100) interface formation von Hohenecker, St, Kampen, T.U, Werninghaus, T, Zahn, D.R.T, Braun, W

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Study of the interaction of tris-(8-hydroxyquinoline) aluminum (Alq3) with potassium using vibrational spectroscopy: Examination of possible isomerization upon K doping von Sakurai, Y., Hosoi, Y., Ishii, H., Ouchi, Y., Salvan, G., Kobitski, A., Kampen, T. U., Zahn, D. R. T., Seki, K.

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Single crystals of the organic semiconductor perylene tetracarboxylic dianhydride studied by Raman spectroscopy von Tenne, D. A., Park, S., Kampen, T. U., Das, A., Scholz, R., Zahn, D. R. T.

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Oxidation of clean and H-passivated Si(111) surfaces von Stockhausen, A., Kampen, T.U., Mönch, W.

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Silver Schottky contacts on Si(111) : H-(1×1) surfaces prepared by wet-chemical etching von KAMPEN, T. U, SCHMITSDORF, R. F, MÖNCH, W

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Electrical and optical properties of p-SiC/n-GaN heterostructures von Topf, M, Meister, D, Dirnstorfer, I, Steude, G, Fischer, S, Meyer, B.K, Krtschil, A, Witte, H, Christen, J, Kampen, T.U, Mönch, W

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Electrolytic hydride generation electrothermal atomic absorption spectrometry : in situ trapping of As on different pre-conditioned end-heated graphite tubes von DENKHAUS, E, GOLLOCH, A, KAMPEN, T. U, NIERFELD, M, TELGHEDER, U

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