Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si von Yiwen Rong, Yangsi Ge, Yijie Huo, Fiorentino, M., Tan, M., Kamins, T., Ochalski, T.J., Huyet, G., Harris, J.S.

Volltext

Si-Ge surface-normal asymmetric Fabry-Perot quantum-confined stark effect electroabsorption modulator von Edwards, Elizabeth H, Audet, R M, Claussen, Stephanie A, Schaevitz, Rebecca K, Taşyürek, Emel, Shen Ren, Yiwen Rong, Kamins, Ted I, Harris, James S, Miller, David A B, Dosunmu, Olufemi I, Ünlü, M Selim

Volltext

(Invited) Structural and Optical Properties of Si/Ge Nanowire Heterojunctions von Tsybeskov, Leonid, Chang, H.-Y., Mala, Selina, Kamins, Ted I., Wu, Xiaohua, Lockwood, David J.

Volltext

Field-electron emission at 300 K in self-assembled arrays of silicon nanowires von Klimovskaya, Alla I., Litvin, Yurii M., Moklyak, Yuliya Yu, Dadykin, Alex A., Kamins, Ted I., Sharma, Shashank

Volltext

Field-electron emission at 300K in self-assembled arrays of silicon nanowires von Klimovskaya, Alla I., Litvin, Yurii M., Moklyak, Yuliya Yu, Dadykin, Alex A., Kamins, Ted I., Sharma, Shashank

Volltext

(Invited) Structural and Optical Properties of Si/Ge Nanowire Heterojunctions von Tsybeskov, Leonid, Chang, H.-Y., Mala, Selina, Kamins, Ted I., Wu, Xiaohua, Lockwood, David J.

Volltext

On the doping of Silicon nanowires grown by molecular beam epitaxy von Das Kanungo, Pratyush, The Kanungo, Pratyush

Volltext bestellen

Si-Ge surface-normal asymmetric fabry-perot quantum-confined stark effect electroabsorption modulator von Edwards, Elizabeth H., Miller, David A.B., Dosunmu, Olufemi I., Selim Unlu, M., Audet, Ross M., Rong, Yiwen, Claussen, Stephanie A., Schaevitz, Rebecca K., Tasyurek, Emel, Ren, Shen, Kamins, Ted I., Harris, James S.

Volltext

(Invited) MBE Growth of GeSn and SiGeSn Heterojunctions for Photonic Devices von Harris, James S, Lin, Hai, Chen, Robert, Huo, Yijie, Fei, Ed, Paik, Seonghyun, Cho, Seongjae, Kamins, Ted

Volltext

Beyond CMOS Electronics: Self-Assembled Nanostructures von Kamins, Ted

Volltext

0.18-μm fully-depleted silicon-on-insulator MOSFET's von Min Cao, Kamins, T., Voorde, P.V., Diaz, C., Greene, W.

Volltext

Physico-chemical model and computer simulations of silicon nanowire growth von Efremov, Aleksey

Volltext

3D composition of epitaxial nanocrystals by anomalous x-ray diffraction: Observation of a Si-rich core in Ge domes on Si(100) von Kycia, Stefan, Medeiros-Ribeiro, Gilberto, Malachias, Angelo, Magalhaes-Paniago, Rogerio, Kamins, Ted, Williams, R Stanley

Volltext

MBE Growth of GeSn and SiGeSn Heterojunctions for Photonic Devices von Harris, James S., Chen, Robert, Lin, Hai, Huo, Yijie, Fei, Ed, Kamins, Ted

Volltext

High-speed, low-power, implanted-buried-oxide CMOS circuits von Colinge, J.-P., Hashimoto, K., Kamins, T., Shang-Yi Chiang, En-Den Liu, Shiesen Peng, Rissman, P.

Volltext