Electrical properties of Ge crystals and effective Schottky barrier height of NiGe/Ge junctions modified by P and chalcogen (S, Se, or Te) co-doping von Koike, Masahiro, Kamimuta, Yuuichi, Tezuka, Tsutomu, Yamabe, Kikuo

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Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface von Iwamoto, Kunihiko, Kamimuta, Yuuichi, Ogawa, Arito, Watanabe, Yukimune, Migita, Shinji, Mizubayashi, Wataru, Morita, Yukinori, Takahashi, Masashi, Ota, Hiroyuki, Nabatame, Toshihide, Toriumi, Akira

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In situ doped epitaxial growth of highly dopant-activated n+-Ge layers for reduction of parasitic resistance in Ge-nMISFETs von Moriyama, Yoshihiko, Kamimuta, Yuuichi, Kamata, Yoshiki, Ikeda, Keiji, Sakai, Akira, Tezuka, Tsutomu

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Modulation of NiGe/Ge Contact Resistance by S and P Co-introduction von Koike, Masahiro, Kamimuta, Yuuichi, Tezuka, Tsutomu

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(Invited) Ge-on-Insulator MOSFETs for High-Performance and 3D-LSI Applications von Tezuka, Tsutomu, Ikeda, Keiji, Kamata, Yoshiki, Kamimuta, Yuuichi, Usuda, Koji, Moriyama, Yoshihiko, Ono, Mizuki, Koike, Masahiro, Oda, Minoru, Irisawa, Toshifumi, Mieda, Eiko, Maeda, Tatsuro, Jevasuwan, Wipakorn, Kurashima, Yuichi, Takagi, Hideki, Furuse, Kiyoe, Kurosawa, Etsuo

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(Invited) Mobility Enhancement of Uniaxially Strained Germanium Nanowire MOSFETs von Ikeda, Keiji, Kamimuta, Yuuichi, Moriyama, Yoshihiko, Ono, Mizuki, Usuda, Koji, Oda, Minoru, Irisawa, Toshifumi, Kosemura, Daisuke, Ogura, Atsushi, Tezuka, Tsutomu

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Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing von Seki, Harumi, Kamimuta, Yuuichi, Mitani, Yuichiro

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Dielectric Constant Behavior of Hf–O–N System von Ino, Tsunehiro, Kamimuta, Yuuichi, Suzuki, Masamichi, Koyama, Masato, Nishiyama, Akira

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Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy von Kamimuta, Yuuichi, Koike, Masahiro, Ino, Tsunehiro, Suzuki, Masamichi, Koyama, Masato, Tsunashima, Yoshitaka, Nishiyama, Akira

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High-performance poly-Ge short-channel metal-oxide-semiconductor field-effect transistors formed on SiO2 layer by flash lamp annealing von Usuda, Koji, Kamata, Yoshiki, Kamimuta, Yuuichi, Mori, Takahiro, Koike, Masahiro, Tezuka, Tsutomu

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Modulation of NiGe/Ge Schottky barrier height by S and P co-introduction von Koike, Masahiro, Kamimuta, Yuuichi, Tezuka, Tsutomu

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Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annea... von Koyama, Masato, Kamimuta, Yuuichi, Koike, Mitsuo, Suzuki, Masamichi, Nishiyama, Akira

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First demonstration of threshold voltage control by sub-1V back-gate biasing for thin body and buried-oxide (TBB) Ge-on-insulator (GOI) MOSFETs for low-power operation von Ikeda, K., Moriyama, Y., Ono, M., Kamimuta, Y., Irisawa, T., Kamata, Y., Sakai, A., Tezuka, T.

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Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors... von Moriyama, Yoshihiko, Kamimuta, Yuuichi, Ikeda, Keiji, Tezuka, Tsutomu

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NiGe/n+-Ge junctions with ultralow contact resistivity formed by two-step P-ion implantation von Koike, Masahiro, Kamimuta, Yuuichi, Kurosawa, Etsuo, Tezuka, Tsutomu

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Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers von Moriyama, Yoshihiko, Ikeda, Keiji, Takeuchi, Shotaro, Kamimuta, Yuuichi, Nakamura, Yoshiaki, Izunome, Koji, Sakai, Akira, Tezuka, Tsutomu

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Cubic-HfN Formation in Hf-Based High-k Gate Dielectrics with N Incorporation and Its Impact on Electrical Properties of Films von Koyama, Masato, Kamimuta, Yuuichi, Koike, Masahiro, Ino, Tsunehiro, Nishiyama, Akira

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Fabrication of bonded GeOI substrates with thin Al2O3/SiO2 buried oxide layers von Moriyama, Yoshihiko, Ikeda, Keiji, Kamimuta, Yuuichi, Oda, Minoru, Irisawa, Toshifumi, Nakamura, Yoshiaki, Sakai, Akira, Tezuka, Tsutomu

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Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge- nMOSFETs von Moriyama, Yoshihiko, Kamimuta, Yuuichi, Ikeda, Keiji, Tezuka, Tsutomu

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Hole-Mobility and Drive-Current Enhancement in Ge-Rich Strained Silicon--Germanium Wire Tri-Gate Metal--Oxide--Semiconductor Field-Effect Transistors with Nickel-Germanosilicide Me... von Ikeda, Keiji, Oda, Minoru, Kamimuta, Yuuichi, Moriyama, Yoshihiko, Tezuka, Tsutomu

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