First Demonstration of Coexistence of Standard Gigabit TDM-PON and Code Division Multiplexed PON Architectures Toward Next Generation Access Network von Tamai, H., Sarashina, M., Iwamura, H., Kashima, M., Gupta, G.C., Ushikubo, T., Kamijoh, T., Chanclou, P., Genay, N., Landousies, B., Mosek, A., Gredziak, M.

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A Simple One-System Solution COF-PON for Metro/Access Networks von Gupta, G.C., Kashima, M., Iwamura, H., Tamai, H., Ushikubo, T., Kamijoh, T.

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Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding von Wada, H., Kamijoh, T.

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Field trial of time-spreading and wavelength-hopping OCDM transmission using FBG en/decoders von Minato, N, Kutsuzawa, S, Sasaki, K, Kobayashi, S, Nishiki, A, Ushikubo, T, Kamijoh, T, Kamio, Y, Wada, N, Kubota, F

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42 dB loss budget hybrid DWDM-CDM-PON without optical amplifier von KASHIMA, M, GUPTA, G. C, IWAMURA, H, TAMAI, H, WATANABE, R, USHIKUBO, T, KAMIJOH, T

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Interface structure of selectively oxidized AlAs/GaAs von Takamori, T., Takemasa, K., Kamijoh, T.

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1.3-μm InP-InGaAsP lasers fabricated on Si substrates by wafer bonding von Wada, H., Kamijoh, T.

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Cavity detuning effects in semiconductor microcavity light emitting diodes von Pratt, A. R., Takamori, T., Kamijoh, T.

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Temperature dependence of InGaAs/GaAs quantum well microcavity light-emitting diodes von Takamori, T., Pratt, A. R., Kamijoh, T.

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Temperature and polarization dependence of LiNbO3 quasiphase-matched wavelength converters von Xu, C. Q., Fujita, K., Ogawa, Y., Kamijoh, T.

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Two-module stage optical switch network von Okayama, H., Okabe, Y., Arai, T., Kamijoh, T., Tsuruoka, T.

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1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layer von Takemasa, K., Munakata, T., Kobayashi, M., Wada, H., Kamijoh, T.

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Effects of well number on temperature characteristics in 1.3-μm AlGaInAs-InP quantum-well lasers von Wada, H., Takemasa, K., Munakata, T., Kobayashi, M., Kamijoh, T.

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Photoluminescence study of cavity-polariton-mode splitting using high-contrast selectively oxidized AlAs/GaAs mirrors von Pratt, A. R., Takamori, T., Kamijoh, T.

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Room-temperature photo-pumped operation of 1.58-μm vertical-cavity lasers fabricated on Si substrates using wafer bonding von Wada, H., Takamori, T., Kamijoh, T.

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Evaluation of the interface of thin GaN layers on c - and m -plane ZnO substrates by Rutherford backscattering von Izawa, Y., Oga, T., Ida, T., Kuriyama, K., Hashimoto, A., Kotake, H., Kamijoh, T.

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GaAs side-by-side direct wafer bonding and formation of lateral pn junction von Takamori, T., Wada, H., Kamijoh, T.

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Compositional abruptness of wet-oxidized AlAs/GaAs interface von Takamori, T., Takemasa, K., Kamijoh, T.

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Three wave mixing using a fiber ring resonator von Xu, C. Q., Shinozaki, K., Okayama, H., Kamijoh, T.

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Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure von JOMA, M, HORIKAWA, H, XU, C. Q, YAMADA, K, KATOH, Y, KAMIJOH, T

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