A Physics-Based Device Model of Transient Neutron Damage in Bipolar Junction Transistors von Keiter, Eric R, Russo, T V, Hembree, C E, Kambour, K E

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A derivation of the van der Pauw formula from electrostatics von Weiss, Jonathan D., Kaplar, Robert J., Kambour, Kenneth E.

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Effect of radiation induced charging on gate-all-around NMOS devices von Kambour, Kenneth E., Kouhestani, Camron, Nguyen, Duc D., Devine, Roderick A. B.

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Insight into the multicomponent nature of negative bias temperature instability von Nguyen, Duc D., Kouhestani, Camron, Kambour, Kenneth E., Devine, Roderick A. B.

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Ionizing radiation induced parametric variations in P3HT:PCBM organic photovoltaic cells von Kouhestani, Camron, Nguyen, Duc D., Kambour, Kenneth E., Devine, Roderick A. B., Chen, Johnny, Li, Gang, Yang, Yang

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Negative bias temperature instability threshold voltage shift turnaround in SiGe channel MOSFETs von Kambour, Kenneth E., Kouhestani, Camron, McMarr, Patrick, Hughes, Harold L., Steinke, Daniel R., Devine, Roderick A. B.

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Direct evidence for interface state annealing in the negative bias temperature instability response von Nguyen, Duc D., Kouhestani, Camron, Kambour, Kenneth E., Devine, Roderick A. B.

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Transient measurements of carrier relaxation time and density in the P3HT:PCBM organic photovoltaic cell von Kouhestani, Camron, Nguyen, Duc D., Kambour, Kenneth E., Devine, Roderick A. B., Chen, Johnny, Li, Gang, Yang, Yang

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A Physics-based Device Model of Transient Neutron Damage in Bipolar Junction Transistors von Keiter, Eric Richard, Russo, Thomas V., Hembree, Charles E., Kambour, Kenneth E.

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Measurement and Identification of Three Contributing Charge Terms in Negative Bias Temperature Instability von Mayberry, Clay, Nguyen, Duc D., Kouhestani, Camron, Kambour, Kenneth E., Hjalmarson, Harold P., Devine, Roderick A.B.

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Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices von Hjalmarson, Harold Paul, Nguyen, D. D., Kambour, Kenneth E., Kouhestani, C., Devine, Roderick A. B.

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A theory of lock-on and electrical breakdown von Kambour, Kenneth E

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Dependence of the Multi-Component Nature of Bias Temperature Instability in MOSFETs on Oxide and Device Type von Nguyen, Duc, Kambour, Kenneth, Kouhestani, Camron, Devine, Roderick A.B.

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Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices von Hjalmarson, Harold P., Nguyen, Duc, Kambour, Kenneth, Kouhestani, Camron, Devine, Roderick A.B.

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High Temperature Annealing of the Interface State Component of Negative-Bias Temperature Instability (NBTI) in MOSFET Devices von Nguyen, Duc, Kambour, Kenneth, Kouhestani, Camron, Hjalmarson, Harold P., Devine, Roderick A.B.

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