Treffer 1 - 2 von 2 für Suche 'Kamayev, G.N.', Suchdauer: 0,29s Treffer weiter einschränken
  1. 1
    The electronic structure peculiarities of a strained silicon layer in silicon-on-insulator: Experimental and theoretical data

    The electronic structure peculiarities of a strained silicon layer in silicon-on-insulator: Experimental and theoretical data von Terekhov, V.A., Nesterov, D.N., Domashevskaya, E.P., Geraskina, E.V., Manyakin, M.D., Kurganskii, S.I., Kamayev, G.N., Antonenko, A.H., Turishchev, S.Yu

    Veröffentlicht in Applied surface science

    Volltext
    Artikel

    Zu den Favoriten
    Gespeichert in:
  2. 2
    The Removal Kinetis of Boron and Phosphorus Atoms from Substitutional Site in Si Caused by Interaction with Radiation Defects

    The Removal Kinetis of Boron and Phosphorus Atoms from Substitutional Site in Si Caused by Interaction with Radiation Defects von Kamayev, G.N., Smirnov, L.S., Bolotov, V.V., Akhmetov, V.D.

    Veröffentlicht in Materials science forum

    Volltext
    Artikel

    Zu den Favoriten
    Gespeichert in:

Suchwerkzeuge: