Investigation of propagation and coalescence of threading screw and mixed dislocations in 4H-SiC crystals grown by the high-temperature gas source method von Kamata, Isaho, Hoshino, Norihiro, Betsuyaku, Kiyoshi, Kanda, Takahiro, Tsuchida, Hidekazu

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Mechanical-stressing measurements of formation energy of single Shockley stacking faults in 4H-SiC von Maeda, Koji, Murata, Koichi, Kamata, Isaho, Tsuchida, Hidekazu

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Formation of extended defects in 4H-SiC epitaxial growth and development of a fast growth technique von Tsuchida, Hidekazu, Ito, Masahiko, Kamata, Isaho, Nagano, Masahiro

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Photoluminescence of Frank-type defects on the basal plane in 4H–SiC epilayers von Kamata, Isaho, Zhang, Xuan, Tsuchida, Hidekazu

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Suppressed expansion of single Shockley stacking faults at narrow widths in 4H-SiC von Maeda, Koji, Murata, Koichi, Tawara, Takeshi, Kamata, Isaho, Tsuchida, Hidekazu

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Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source method von Hoshino, Norihiro, Kamata, Isaho, Kanda, Takahiro, Tokuda, Yuichiro, Kuno, Hironari, Tsuchida, Hidekazu

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Glide of C-core partial dislocations along edges of expanding double-Shockley stacking faults in heavily nitrogen-doped 4H-SiC von Tokuda, Yuichiro, Kamata, Isaho, Hoshino, Norihiro, Tsuchida, Hidekazu

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Fast growth of n-type 4H-SiC bulk crystal by gas-source method von Hoshino, Norihiro, Kamata, Isaho, Tokuda, Yuichiro, Makino, Emi, Kanda, Takahiro, Sugiyama, Naohiro, Kuno, Hironari, Kojima, Jun, Tsuchida, Hidekazu

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Three-dimensional imaging and tilt-angle analysis of dislocations in 4H-SiC by two-photon-excited band-edge photoluminescence von Tanuma, Ryohei, Nagano, Masahiro, Kamata, Isaho, Tsuchida, Hidekazu

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X-ray topographical analysis of 4H-SiC epitaxial layers using a forward-transmitted beam under a multiple-beam diffraction condition von Kamata, Isaho, Tsusaka, Yoshiyuki, Tanuma, Ryohei, Matsui, Junji

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Stable and high-speed SiC bulk growth without dendrites by the HTCVD method von Tokuda, Yuichiro, Makino, Emi, Sugiyama, Naohiro, Kamata, Isaho, Hoshino, Norihiro, Kojima, Jun, Hara, Kazukuni, Tsuchida, Hidekazu

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Annealing effects on single Shockley faults in 4H-SiC von Miyanagi, Toshiyuki, Tsuchida, Hidekazu, Kamata, Isaho, Nakamura, Tomonori, Nakayama, Koji, Ishii, Ryousuke, Sugawara, Yoshitaka

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Deflection of threading dislocations in patterned 4H–SiC epitaxial growth von Tsuchida, Hidekazu, Takanashi, Ryosuke, Kamata, Isaho, Hoshino, Norihiro, Makino, Emi, Kojima, Jun

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Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers von Tsuchida, Hidekazu, Nagano, Masahiro, Kamata, Isaho

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Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method von Kojima, Jun, Tokuda, Yuichiro, Sugiyama, Naohiro, Hoshino, Norihiro, Makino, Emi, Kamata, Isaho, Tsuchida, Hidekazu

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Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers von Tsuchida, Hidekazu, Kamata, Isaho, Zhang, Xuan

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X-ray Microbeam Three-Dimensional Topography Imaging and Strain Analysis of Basal-Plane Dislocations and Threading Edge Dislocations in 4H-SiC von Tanuma, Ryohei, Mori, Daisuke, Kamata, Isaho, Tsuchida, Hidekazu

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Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth von Fujibayashi, Hiroaki, Hara, Kazukuni, Ito, Masahiko, Osawa, Hitoshi, Naitou, Masami, Fukada, Keisuke, Uehigashi, Hideyuki, Kamata, Isaho, Tsuchida, Hidekazu, Kozawa, Takahiro

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High-speed, high-quality crystal growth of 4H-SiC by high-temperature gas source method von Hoshino, Norihiro, Kamata, Isaho, Tokuda, Yuichiro, Makino, Emi, Sugiyama, Naohiro, Kojima, Jun, Tsuchida, Hidekazu

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Analysis of the inclined structure of threading screw dislocation in SiC using deep X-ray topography von Ishiji, Kotaro, Yoneyama, Akio, Kamata, Isaho

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