New photoacids in microarray synthesis of oligonucleotides von Sinyakov, A.N., Kostina, E.V., Zaytsev, D.E., Chukanov, N.V., Kamaev, G.N., Bessmeltsev, V.P., Shelkovnikov, V.V., Vasil'ev, E.V.

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Linkers for oligonucleotide microarray synthesis von Sinyakov, A.N., Ryabinin, V.A., Kostina, E.V., Zaytsev, D.E., Chukanov, N.V., Kamaev, G.N.

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Determination of the infrared absorption cross-section of the stretching vibrations of Ge–O bonds in GeOx films von Zhang, Fan, Volodin, V.A., Astankova, K.N., Kamaev, G.N., Azarov, I.A., Prosvirin, I.P., Vergnat, M.

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Short-range order and memory properties of silicon oxide –based memristors von Kamaev, G.N., Novikov, Yu.N., Prosvirin, I.P., Gismatulin, A.A., Khanas, A.R., Zenkevich, A.V., Gritsenko, V.A.

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Electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application von Perevalov, T.V., Volodin, V.A., Kamaev, G.N., Gismatulin, A.A., Cherkova, S.G., Prosvirin, I.P., Astankova, K.N., Gritsenko, V.A.

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Electronic structure and nanoscale potential fluctuations in strongly nonstoichiometric PECVD SiO von Perevalov, T.V., Volodin, V.A., Kamaev, G.N., Krivyakin, G.K., Gritsenko, V.A., Prosvirin, I.P.

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Electronic structure and nanoscale potential fluctuations in strongly nonstoichiometric PECVD SiOx von Perevalov, T.V., Volodin, V.A., Kamaev, G.N., Krivyakin, G.K., Gritsenko, V.A., Prosvirin, I.P.

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Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing von Krivyakin, G. K., Volodin, V. A., Kochubei, S. A., Kamaev, G. N., Purkrt, A., Remes, Z., Fajgar, R., Stuchliková, T. H., Stuchlik, J.

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Application of the narrow spectral range InAs-FPA-based IR camera for the investigation of the interface voids in silicon wafer bonding von Vainer, B.G, Kamaev, G.N, Kurishev, G.L

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A study of interface states of directly bonded silicon-on-insulator structures von Buldygin, S.A, Golod, S.V, Kamaev, G.N, Skok, E.M

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Influence of irradiation with swift heavy ions on multilayer Si/Si[O.sub.2] heterostructures von Kachurin, G.A, Cherkova, S.G, Marin, D.V, Volodin, V.A, Cherkov, A.G, Antonenko, A. Kh, Kamaev, G.N, Skuratov, V.A

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Improved characterization methods for unipolar directly bonded semiconductor junctions von Stuchinsky, V.A., Kamaev, G.N., Khoroshilov, K.Yu

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Special Features of the Electrical Conductivity in Doped {alpha}-Si:H Films with Silicon Nanocrystals von Arzhannikova, S.A., Efremov, M.D., Kamaev, G.N., Vishnyakov, A.V., Volodin, V.A.

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Divacancy Induced Improvement for Stabilization of Silicon Conductivity versus Temperature von Stuchinsky, V.A., Kamaev, G.N., Efremov, M.D., Mihailov, B.I., Kurkin, S.G.

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Photoinduced Variation of Capacitance Characteristics of MDS Structures with Three-Layer SiNx Dielectrics von Efremov, M.D., Kamaev, G.N., Minakov, Yu. A., Kochubei, S.A., Arzhannikova, Sofia A., Shevchuk, V.S., Volodin, Vladimir A., Marin, D.V., Popov, A.A.

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Coulomb Blockade of the Conductivity of SiO{sub x} Films Due to One-Electron Charging of a Silicon Quantum Dot in a Chain of Electronic States von Efremov, M.D., Kamaev, G.N., Volodin, V.A., Arzhannikova, S.A., Kachurin, G.A., Cherkova, S.G., Kretinin, A.V., Malyutina-Bronskaya, V.V., Marin, D.V.

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New methods for electrical characterization of unipolar directly bonded Si/Si structures permitting quantitative evaluation of their lateral non-uniformity von Stuchinsky, V.A., Kamaev, G.N.

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Laser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiNx Films von Marin, D.V., Efremov, M.D., Kamaev, G.N., Minakov, Yu. A., Kochubei, S.A., Arzhannikova, Sofia A., Soldatenkov, S.A., Volodin, Vladimir A., Shevchuk, V.S., Popov, A.A.

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Coulomb Blockade in Silicon Nanocrystals Embedded in SiO2 Matrix von Marin, D.V., Efremov, M.D., Kamaev, G.N., Malutina-Bronskaya, V.V., Yanovskaya, S.G., Arzhannikova, Sofia A., Kachurin, G.A., Kretinin, A.V., Volodin, Vladimir A.

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Interfacial Oxygen Thermodonor Formation in Plasma-Hydrogenated Silicon von Chern'aev, S.A., Kamaev, G.N., Efremov, M.D., Bolotov, V.V.

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