Relation between energy gap and saturation currents in GaInAs homo p-n junctions von Mintairov, M.A., Evstropov, V.V., Mintairov, S.A., Shvarts, M.Z., Kalyuzhnyy, N.A.

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Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells von Andreev, V. M., Gudovskikh, A. S., Mintairov, M. A., Mintairov, S. A., Lantratov, V. M., Evstropov, V. V., Kalyuzhnyy, N. A., Luque, A.

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Interface properties of GalnP/Ge hetero-structure sub-cells of multi-junction solar cells von Gudovskikh, A S, Zelentsov, K S, Kalyuzhnyy, NA, Evstropov, V V, Lantratov, V M, Mintairov, SA

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Band structure at heterojunction interfaces of GaInP solar cells von Gudovskikh, A.S., Kleider, J.P., Kalyuzhnyy, N.A., Lantratov, V.M., Mintairov, S.A.

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Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications von Mintairov, S A, Kalyuzhnyy, N A, Lantratov, V M, Maximov, M V, Nadtochiy, A M, Rouvimov, Sergei, Zhukov, A E

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