Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy von El Amrani, Mohammed, Buckley, Julien, Kaltsounis, Thomas, Arguello, David Plaza, El Rammouz, Hala, Alquier, Daniel, Charles, Matthew

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Localized Epitaxial Growth of 402V Breakdown Voltage Quasi‐Vertical GaN‐on‐Si p‐n Diode on 200mm‐Diameter Wafers von Kaltsounis, Thomas, Mohammed El Amrani, David Plaza Arguello, Hala El Rammouz, Maurya, Vishwajeet, Lafossas, Matthieu, Torrengo, Simona, Haas, Helge, Mendizabal, Laurent, Gueugnot, Alain, Mariolle, Denis, Jalabert, Thomas, Buckley, Julien, Cordier, Yvon, Charles, Matthew

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Localized Epitaxial Growth of 402 V Breakdown Voltage Quasi‐Vertical GaN‐on‐Si p‐n Diode on 200 mm‐Diameter Wafers von Kaltsounis, Thomas, El Amrani, Mohammed, Plaza Arguello, David, El Rammouz, Hala, Maurya, Vishwajeet, Lafossas, Matthieu, Torrengo, Simona, Haas, Helge, Mendizabal, Laurent, Gueugnot, Alain, Mariolle, Denis, Jalabert, Thomas, Buckley, Julien, Cordier, Yvon, Charles, Matthew

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High breakdown voltages on pseudo-vertical p–n diodes by selective area growth of GaN on silicon von Kaltsounis, Thomas, El Amrani, Mohammed, Plaza Arguello, David, El Rammouz, Hala, Lafossas, Matthieu, Torrengo, Simona, Mendizabal, Laurent, Gueugnot, Alain, Mariolle, Denis, Jalabert, Thomas, Buckley, Julien, Cordier, Yvon, Charles, Matthew

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Characterization of unintentional doping in localized epitaxial GaN layers on Si wafers by scanning spreading resistance microscopy von Kaltsounis, Thomas, Haas, Helge, Lafossas, Matthieu, Torrengo, Simona, Maurya, Vishwajeet, Buckley, Julien, Mariolle, Denis, Veillerot, Marc, Gueugnot, Alain, Mendizabal, Laurent, Cordier, Yvon, Charles, Matthew

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Influence of fluorine implantation on the physical and electrical characteristics of GaN-on-GaN vertical Schottky diode von Maurya, Vishwajeet, Buckley, Julien, Alquier, Daniel, Haas, Helge, Irekti, Mohamed-Reda, Kaltsounis, Thomas, Charles, Matthew, Rochat, Névine, Sonneville, Camille, Sousa, Veronique

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