Analyses and Experiments of the Schottky Contact Super Barrier Rectifier (SSBR) von Chen, Wensuo, Liao, Ruijin, Zeng, Zheng, Zhang, Peijian, Zhong, Yi, Tan, Kaizhou, Chen, Hao, Zhang, Bo

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A Novel Low VF Super Barrier Rectifier (SBR) With an N-Enhancement Layer von Wensuo Chen, Peijian Zhang, Yi Zhong, Kaizhou Tan, Ruijin Liao, Zheng Zeng, Bo Zhang

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New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs von Zhu, Kunfeng, Zhang, Peijian, Xu, Zicheng, Wang, Tao, Yi, Xiaohui, Hong, Min, Yang, Yonghui, Zhang, Guangsheng, Liu, Jian, Wei, Jianan, Pu, Yang, Huang, Dong, Luo, Ting, Chen, Xian, Tang, Xinyue, Tan, Kaizhou, Chen, Wensuo

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SEGR- and SEB-hardened structure with DSPSOI in power MOSFETs von Tang, Zhaohuan, Fu, Xinghua, Yang, Fashun, Tan, Kaizhou, Ma, Kui, Wu, Xue, Lin, Jiexing

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A Stress Concentration MOSFET Structure von Wang, Xiangzhan, Zeng, Qingping, Liu, Bin, Gan, Cheng, Luo, Qian, Yu, Qi, Liu, Yang, Tan, Kaizhou, Ying, Xianwei

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Realizing high breakdown voltage for a novel interface charges islands structure based on partial-SOI substrate von Hu, Shengdong, Luo, Jun, Tan, Kaizhou, Zhang, Ling, Li, Zhaoji, Zhang, Bo, Zhou, Jianlin, Gan, Ping, Qin, Guolin, Zhang, Zhengyuan

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Performance enhancement of c-CESL-strained 95-nm-gate NMOSFET using trench-based structure von 赵迪 罗谦 王向展 于奇 崔伟 谭开洲

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Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer von Huang, Ye, Zhou, Feng, Luo, Jun, Tan, Kaizhou, Chen, Yinhui, Hu, Shengdong, Jin, Jingjing, Chen, Zongze

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A novel terminal structure for total dose irradiation hardened of a P-VDMOS von 唐昭焕 刘嵘侃 谭开洲 罗俊 胡刚毅 李儒章 任华平 王斌

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Impact of Ring-Shaped Collector Contact on Total Ionizing Dose Susceptibility of Vertical n-p-n Bipolar Transistors von Wei, Jianan, Zhang, Peijian, Shui, Guohua, Luo, Ting, Chen, Xian, Wu, Yunchen, Hong, Min, Tang, Xinyue, Zhu, Kunfeng, Zhang, Guangsheng, Zhong, Yi, Fu, Xiaojun, Tan, Kaizhou, Wu, Xue

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A Novel Low V F Super Barrier Rectifier (SBR) With an N-Enhancement Layer von Chen, Wensuo, Zhang, Peijian, Zhong, Yi, Tan, Kaizhou, Liao, Ruijin, Zeng, Zheng, Zhang, Bo

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Impact of Ring-shaped Collector Contact on Total Ionizing Dose Susceptibility of Vertical NPN Bipolar Transistors von Wei, Jianan, Zhang, Peijian, Shui, Guohua, Luo, Ting, Chen, Xian, Wu, Yunchen, Hong, Min, Tang, Xinyue, Zhu, Kunfeng, Zhang, Guangsheng, Zhong, Yi, Fu, Xiaojun, Tan, Kaizhou, Wu, Xue

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A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate von Cui, Wei, Tang, Zhaohuan, Tan, Kaizhou, Zhang, Jing, Zhong, Yi, Hu, Huiyong, Xu, Shiliu, Li, Ping, Hu, Gangyi

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A novel structure for improving the SEGR of a VDMOS von 唐昭焕 胡刚毅 陈光炳 谭开洲 刘勇 罗俊 徐学良

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Updated structure of vertical double-diffused MOSFETs for irradiation hardening against single events von Tang, Zhaohuan, Li, Xingji, Tan, Kaizhou, Liu, Chaoming, Fu, Xinghua

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Study of hybrid orientation structure wafer von 谭开洲 张静 徐世六 张正璠 杨永晖 陈俊 梁涛

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A novel structure in reducing the on-resistance of a VDMOS von 杨永晖 唐昭焕 张正元 刘勇 王志宽 谭开洲 冯志成

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Thin SOI lateral IGBT with band-to-band tunneling mechanism von Fu, Qiang, Tang, Zhaohuan, Tan, Kaizhou, Wang, Zhikuan, Mei, Yong

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A comparison of the effects of cobalt-60 γ ray irradiation on DPSA bipolar transistors at high and low injection levels von Zhang, Peijian, Wu, Xue, Yi, Qianning, Chen, Wensuo, Yang, Yonghui, Zhu, Kunfeng, Tan, Kaizhou, Zhong, Yi

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A 150%enhancement of PMOSFET mobility using hybrid orientation von 唐昭焕 谭开洲 崔伟 张静 钟怡 徐世六 郝跃 张鹤鸣 胡辉勇 张正璠 胡刚毅

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