Undoped semi-insulating InP by high-pressure annealing von KAINOSHO, K, SHIMAKURA, H, YAMAMOTO, H, ODA, O

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Fabrication of undoped semi-insulating InP by multiple-step wafer annealing von UCHIDA, M, KAINOSHO, K, OHTA, M, ODA, O

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Characterizations of InxAlyGa1−x−yN alloy systems grown on GaN substrates by molecular-beam epitaxy von Iwata, S., Kubo, S., Konishi, M., Saimei, T., Kurai, S., Taguchi, T., Kainosho, K., Yokohata, A.

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Growth of AlxGa1-xN and Mg-Doped GaN Epilayers on Ga- and N-Faces of Bulk GaN Single Crystal Substrates by Molecular-Beam Epitaxy von Konishi, M., Tanabe, T., Kubo, S., Kurai, S., Taguchi, T., Kainosho, K., Yokohata, A.

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GaN Bulk Substrates for GaN Based LEDs and LDs von Oda, O., Inoue, T., Seki, Y., Kainosho, K., Yaegashi, S., Wakahara, A., Yoshida, A., Kurai, S., Yamada, Y., Taguchi, T.

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Effect of annealing conditions on the uniformity of undoped semi-insulating InP von KAINOSHO, K, OHTA, M, UCHIDA, M, NAKAMURA, M, ODA, O

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Characterization of deep level defects in thermally annealed Fe-doped semi-insulating InP by photoinduced current transient spectroscopy von KALBOUSSI, A, MARRAKCHI, G, GUILLOT, G, KAINOSHO, K, ODA, O

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Growth of homoepitaxial III-nitride layers on bulk GaN single crystals by molecular-beam epitaxy von Iwata, S., Kubo, S., Konishi, M., Saimei, T., Kurai, S., Taguchi, T., Kainosho, K., Yokohata, A.

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Characterization of high-purity InP by photoluminescence von INOUE, T, KAINOSHO, K, HIRANO, R, SHIMAKURA, H, KANAZAWA, T, ODA, O

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Deep centers in undoped semi-insulating InP von FANG, Z.-Q, LOOK, D. C, UCHIDA, M, KAINOSHO, K, ODA, O

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Electron paramagnetic resonance study of thermal donors in Fe-doped InP von VON DARDELEBEN, H. J, STIEVENARD, D, KAINOSHO, K, ODA, O

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Annealing of undoped InP and the evaluation by photoluminescence von INOUE, T, SHIMAKURA, H, KAINOSHO, K, HIRANO, R, ODA, O

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Growth of low dislocation density InP single crystals by the phosphorus vapor controlled LEC method von KOHIRO, K, KAINOSHO, K, ODA, O

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Fe doping and preparation of semi insulating InP by wafer annealing under Fe phosphide vapor pressure von Uchida, M., Asahi, T., Kainosho, K., Matsuda, Y., Oda, O.

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Thermal donor formation in Fe-doped semi-insulating InP von VON BARDELEBEN, H. J, BOURGOIN, J. C, KAINOSHO, K, ODA, O

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Semi-insulating InP through wafer annealing von Oda, O., Uchida, M., Kainosho, K., Ohta, M., Warashina, M., Tajima, M.

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Development of high quality InP bulk crystals von ODA, O, KAINOSHO, K, KOHIRO, K, HIRANO, R, SHIMAKURA, H, INOUE, T, YAMAMOTO, H, FUKUI, T

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Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth von Kubo, Shuichi, Iwata, Shiro, Kurai, Satoshi, Taguchi, Tsunemasa, Kainosho, Keiji, Yokohata, Akihito

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Fe Doping and Preparation of Semi-Insulating InP by Wafer Annealing under Fe Phosphide Vapor Pressure von Uchida, Masayuki, Asahi, Toshiaki, Kainosho, Keiji, Matsuda, Yuko, Oda, Osamu

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HYDRIDE VAPOR PHASE EPITAXY OF GaN ON NdGaO3 SUBSTRATE AND REALIZATION OF FREESTANDING GaN WAFERS WITH 2-INCH SCALE von Wakahara, A, Yamamoto, T, Ishio, K, Yoshida, A, Seki, Y, Kainosho, K

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