Photoconductivity properties of silver-doped zinc oxide films von Hovsepyan, R., Ayvazyan, O., Aghamalyan, N., Poghosyan, A., Petrosyan, S., Harutyunyan, V., Kafadaryan, Y.

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Experimental evidence of polarons in silver doped ZnO films von Kafadaryan, Y., Aghamalyan, N., Arakelyan, A., Petrosyan, S., Badalyan, G., Poghosyan, A., Hovsepyan, R.

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On polaron stability in Ag-doped ZnO films von Sarkisian, A. R., Aghamalyan, N. R., Nersisyan, M. N., Petrosyan, S. I., Poghosyan, A. R., Ghambaryan, I. A., Badalyan, G. R., Hovsepyan, R. K., Kafadaryan, Y. A.

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Correction to: Photoconductivity properties of silver-doped zinc oxide films von Hovsepyan, R., Ayvazyan, O., Aghamalyan, N., Poghosyan, A., Petrosyan, S., Harutyunyan, V., Kafadaryan, Y.

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The effect of bottom LaB6 electrode and La2O3 interlayer on resistance switching in devices based on Li-doped ZnO films von Kafadaryan, Y., Igityan, A., Aghamalyan, N., Petrosyan, S.

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Structural and electrical characteristics of lanthanum oxide formed on surface of LaB6 film by annealing von Igityan, A., Kafadaryan, Y., Aghamalyan, N., Petrosyan, S., Badalyan, G., Hovsepyan, R., Gambaryan, I., Eganyan, A., Semerjian, H., Kuzanyan, A.

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Dependence of the Conductivity Mechanism and Dielectric Properties of Zinc Oxide Films on the Degree of Lithium Doping von Aghamalyan, N. R., Ayvazyan, H. L., Vartanyan, T. A., Kafadaryan, Y. A., Mnatsakanyan, H. G., Hovsepyan, R. K., Poghosyan, A. R.

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Resistivity switching properties of Li-doped ZnO films deposited on LaB6 electrode von Igityan, A., Kafadaryan, Y., Aghamalyan, N., Petrosyan, S., Badalyan, G., Vardanyan, V., Nersisyan, M., Hovsepyan, R., Palagushkin, A., Kryzhanovsky, B.

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Negative Differential Conductivity of Lanthanum-Oxide-Based Structures von Igityan, A., Aghamalyan, N., Hovsepyan, R., Petrosyan, S., Badalyan, G., Gambaryan, I., Papikyan, A., Kafadaryan, Y.

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Spectroscopic Properties of Iron in Translucent Obsidian from the Artheni Deposit (Armenia) von Aghamalyan, N. R., Kafadaryan, Y. A., Manukyan, A. A., Gyulasaryan, H. T., Smbatyan, H. A., Szilágyi, V., Harsányi, I., Gméling, K.

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Field-Effect Transistor Based on Zinc Oxide Using Diffusion Technology von Hovsepyan, R. K., Aghamalyan, N. R., Kafadaryan, Y. A., Arakelyan, A. A., Mnatsakanyan, H. G., Petrosyan, S. I.

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Memristive Effect in Two-Layered Structures Based on Lithium Doped ZnO Films von Igityan, A. S., Aghamalyan, N. R., Petrosyan, S. I., Kafadaryan, Y. A.

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Fundamental Physical Properties of Translucent Obsidian from the Arteni Deposit (Armenia) von Aghamalyan, N. R., Kafadaryan, Y. A., Nersisyan, M. N., Smbatyan, H. A., Bagramyan, V. V., Kohút, M., Milovská, S.

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Effect of Annealing on the Current-Voltage Characteristics of the Ag/GaZnO/FTO Structure von Aghamalyan, N. R., Papikyan, A. K., Hovsepyan, R. K., Petrosyan, S. I., Badalyan, G. R., Gambaryan, I. A., Kafadaryan, Y. A.

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The effect of bottom LaB sub(6) electrode and La sub(2)O sub(3) interlayer on resistance switching in devices based on Li-doped ZnO films von Kafadaryan, Y, Igityan, A, Aghamalyan, N, Petrosyan, S

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The effect of bottom LaB 6 electrode and La 2 O 3 interlayer on resistance switching in devices based on Li‐doped ZnO films von Kafadaryan, Y., Igityan, A., Aghamalyan, N., Petrosyan, S.

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Bipolar resistance switching characteristics of Ag/ZnO:Li/SnO2:F device on glass von Kafadaryan, Y., Igityan, A., Aghamalyan, N., Petrosyan, S., Gambaryan, I., Vardanyan, V., Semerjian, H., Hovsepyan, R., Badalyan, G.

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A new way of preparing the Y–Ba–Cu–O high-temperature superconductor using the sol–gel method von Grigoryan, S, Manukyan, A, Hayrapetyan, A, Arzumanyan, A, Kuzanyan, A, Kafadaryan, Y, Vardanyan, E

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Study of the thermally processed lanthanum hexaboride surface von Igityan, A. S., Kafadaryan, Y. A., Aghamalyan, N. R., Petrosyan, S. I., Badalyan, G. R., Gambaryan, I. A., Hovsepyan, R. K., Semerjian, H. S.

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Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors von Aghamalyan, N. R., Aslanyan, T. A., Vardanyan, E. S., Kafadaryan, Y. A., Hovsepyan, R. K., Petrosyan, S. I., Poghosyan, A. R.

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