Recent progress of GaN power devices for automotive applications von Kachi, Tetsu

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Impact ionization coefficients and critical electric field in GaN von Maeda, Takuya, Narita, Tetsuo, Yamada, Shinji, Kachi, Tetsu, Kimoto, Tsunenobu, Horita, Masahiro, Suda, Jun

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Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate von Horita, Masahiro, Narita, Tetsuo, Kachi, Tetsu, Suda, Jun

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Progress on and challenges of p-type formation for GaN power devices von Narita, Tetsuo, Yoshida, Hikaru, Tomita, Kazuyoshi, Kataoka, Keita, Sakurai, Hideki, Horita, Masahiro, Bockowski, Michal, Ikarashi, Nobuyuki, Suda, Jun, Kachi, Tetsu, Tokuda, Yutaka

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The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate von Narita, Tetsuo, Tokuda, Yutaka, Kogiso, Tatsuya, Tomita, Kazuyoshi, Kachi, Tetsu

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The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE von Narita, Tetsuo, Tomita, Kazuyoshi, Tokuda, Yutaka, Kogiso, Tatsuya, Horita, Masahiro, Kachi, Tetsu

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Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers von Kato, Masashi, Asada, Takato, Maeda, Takuto, Ito, Kenji, Tomita, Kazuyoshi, Narita, Tetsuo, Kachi, Tetsu

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Wide range doping control and defect characterization of GaN layers with various Mg concentrations von Tetsuo, Narita, Nobuyuki, Ikarashi, Kazuyoshi, Tomita, Keita, Kataoka, Tetsu, Kachi

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Rapid Mg substitution to Ga-sites and slow defect recovery revealed by depth-resolved photoluminescence in Mg/N-ion-implanted GaN von Kataoka, Keita, Narita, Tetsuo, Tomita, Kazuyoshi, Yamada, Shinji, Kachi, Tetsu

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Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis von Iwata, Kenji, Sakurai, Hideki, Arai, Shigeo, Nakashima, Takuya, Narita, Tetsuo, Kataoka, Keita, Bockowski, Michal, Nagao, Masaharu, Suda, Jun, Kachi, Tetsu, Ikarashi, Nobuyuki

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Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing von Bockowski, Michal

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Mg-implanted bevel edge termination structure for GaN power device applications von Matys, Maciej, Ishida, Takashi, Nam, Kyung Pil, Sakurai, Hideki, Narita, Tetsuo, Uesugi, Tsutomu, Bockowski, Michal, Suda, Jun, Kachi, Tetsu

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Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage von Matys, Maciej, Kitagawa, Kazuki, Narita, Tetsuo, Uesugi, Tsutomu, Suda, Jun, Kachi, Tetsu

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Detection of defect levels in vicinity of Al2O3/p-type GaN interface using sub-bandgap-light-assisted capacitance–voltage method von Akazawa, Masamichi, Tamamura, Yuya, Nukariya, Takahide, Kubo, Kouta, Sato, Taketomo, Narita, Tetsuo, Kachi, Tetsu

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Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing von Uzuhashi, Jun, Chen, Jun, Kumar, Ashutosh, Yi, Wei, Ohkubo, Tadakatsu, Tanaka, Ryo, Takashima, Shinya, Edo, Masaharu, Sierakowski, Kacper, Bockowski, Michal, Sakurai, Hideki, Kachi, Tetsu, Sekiguchi, Takashi, Hono, Kazuhiro

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Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices von Yamada, Shinji, Sakurai, Hideki, Osada, Yamato, Furuta, Kanji, Nakamura, Toshiyuki, Kamimura, Ryuichiro, Narita, Tetsuo, Suda, Jun, Kachi, Tetsu

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Channeled implantation of magnesium ions in gallium nitride for deep and low-damage doping von Nishimura, Tomoaki, Ikeda, Kiyoji, Kachi, Tetsu

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Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation von Kano, Emi, Kataoka, Keita, Uzuhashi, Jun, Chokawa, Kenta, Sakurai, Hideki, Uedono, Akira, Narita, Tetsuo, Sierakowski, Kacper, Bockowski, Michal, Otsuki, Ritsuo, Kobayashi, Koki, Itoh, Yuta, Nagao, Masahiro, Ohkubo, Tadakatsu, Hono, Kazuhiro, Suda, Jun, Kachi, Tetsu, Ikarashi, Nobuyuki

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Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing von Kachi, Tetsu, Narita, Tetsuo, Sakurai, Hideki, Matys, Maciej, Kataoka, Keita, Hirukawa, Kazufumi, Sumida, Kensuke, Horita, Masahiro, Ikarashi, Nobuyuki, Sierakowski, Kacper, Bockowski, Michal, Suda, Jun

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Quantitative investigation of the lateral diffusion of hydrogen in p-type GaN layers having NPN structures von Narita, Tetsuo, Tomita, Kazuyoshi, Yamada, Shinji, Kachi, Tetsu

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