Variability-Controlled HfZrO2 Ferroelectric Tunnel Junctions for Reservoir Computing von Ota, K., Yamaguchi, M., Kabuyanagi, S., Fujii, S., Saitoh, M., Yoshikawa, M.

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Variability-Controlled HfZrO 2 Ferroelectric Tunnel Junctions for Reservoir Computing von Ota, K., Yamaguchi, M., Kabuyanagi, S., Fujii, S., Saitoh, M., Yoshikawa, M.

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Atomically Flat Germanium (111) Surface by Hydrogen Annealing von Nishimura, Tomonori, Kabuyanagi, Shoichi, Lee, Choonghyun, Yajima, Takeaki, Nagashio, Kosuke, Toriumi, Akira

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Impacts of oxygen passivation on poly-crystalline germanium thin film transistor von Kabuyanagi, Shoichi, Nishimura, Tomonori, Nagashio, Kosuke, Toriumi, Akira

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(Invited) Carrier-Density Dependent Energy Band Gap and Phonon Frequency in Germanium von Toriumi, Akira, Kabuyanagi, Shoichi

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Experimental evidence of zone-center optical phonon softening by accumulating holes in thin Ge von Kabuyanagi, Shoichi, Nishimura, Tomonori, Yajima, Takeaki, Toriumi, Akira

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Nondestructive characterization of oxide/germanium interface by direct-gap photoluminescence analysis von Kabuyanagi, Shoichi, Nishiumura, Tomonori, Yajima, Takeaki, Toriumi, Akira

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n+Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer von Liu, Tony Chi, Kabuyanagi, Shoichi, Nishimura, Tomonori, Yajima, Takeaki, Toriumi, Akira

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High Electron Mobility in Germanium Junctionless n-MOSFETs von Kabuyanagi, Shoichi, Nishimura, Tomonori, Nagashio, Kosuke, Toriumi, Akira

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Atomically flat planarization of Ge(100), (110), and (111) surfaces in H 2 annealing von Nishimura, Tomonori, Kabuyanagi, Shoichi, Zhang, Wenfeng, Lee, Choong Hyun, Yajima, Takeaki, Nagashio, Kosuke, Toriumi, Akira

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Atomically flat planarization of Ge(100), (110), and (111) surfaces in H2 annealing von Nishimura, Tomonori, Kabuyanagi, Shoichi, Zhang, Wenfeng, Lee, Choong Hyun, Yajima, Takeaki, Nagashio, Kosuke, Toriumi, Akira

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Gate-Bias Dependent Phonon Softening Observed in Ge MOSFETs von Kabuyanagi, Shoichi, Nishimura, Tomonori, Yajima, Takeaki, Toriumi, Akira

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Semiconductor device and method of manufacturing the same von KABUYANAGI, SHOICHI, SUGISAKI, TSUYOSHI, FUJII, SHOSUKE

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Semiconductor device and semiconductor memory device von MATSUO, KAZUHIRO, KABUYANAGI, SHOICHI, TANAKA, MASAYUKI, TAKAHASHI, KOTA, FUJII, SHOSUKE, TORATANI, KENICHIRO, TODA, MASAYA, MORIYAMA, WAKAKO

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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME von Fujii, Shosuke, Kabuyanagi, Shoichi, Sugisaki, Tsuyoshi

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Memory device von Yamaguchi, Marina, Kabuyanagi, Shoichi, Kamimuta, Yuuichi, Saitoh, Masumi

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SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE von FUJII, Shosuke, MORIYAMA, Wakako, TORATANI, Kenichiro, TODA, Masaya, MATSUO, Kazuhiro, TAKAHASHI, Kota, TANAKA, Masayuki, KABUYANAGI, Shoichi

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SEMICONDUCTOR MEMORY DEVICE von FUJII, Shosuke, SAITOH, Masumi, KABUYANAGI, Shoichi

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Semiconductor memory device von Fujii, Shosuke, Kabuyanagi, Shoichi, Saitoh, Masumi

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Memory device von Yamaguchi, Marina, Kabuyanagi, Shoichi, Saitoh, Masumi

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