Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors von Cheema, Suraj S., Shanker, Nirmaan, Wang, Li-Chen, Hsu, Cheng-Hsiang, Hsu, Shang-Lin, Liao, Yu-Hung, San Jose, Matthew, Gomez, Jorge, Chakraborty, Wriddhi, Li, Wenshen, Bae, Jong-Ho, Volkman, Steve K., Kwon, Daewoong, Rho, Yoonsoo, Pinelli, Gianni, Rastogi, Ravi, Pipitone, Dominick, Stull, Corey, Cook, Matthew, Tyrrell, Brian, Stoica, Vladimir A., Zhang, Zhan, Freeland, John W., Tassone, Christopher J., Mehta, Apurva, Saheli, Ghazal, Thompson, David, Suh, Dong Ik, Koo, Won-Tae, Nam, Kab-Jin, Jung, Dong Jin, Song, Woo-Bin, Lin, Chung-Hsun, Nam, Seunggeol, Heo, Jinseong, Parihar, Narendra, Grigoropoulos, Costas P., Shafer, Padraic, Fay, Patrick, Ramesh, Ramamoorthy, Mahapatra, Souvik, Ciston, Jim, Datta, Suman, Mohamed, Mohamed, Hu, Chenming, Salahuddin, Sayeef

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Negative differential capacitance in ultrathin ferroelectric hafnia von Jo, Sanghyun, Lee, Hyangsook, Choe, Duk-Hyun, Kim, Jung-Hwa, Lee, Yun Seong, Kwon, Owoong, Nam, Seunggeol, Park, Yoonsang, Kim, Kihong, Chae, Byeong Gyu, Kim, Sangwook, Kang, Seunghun, Moon, Taehwan, Bae, Hagyoul, Won, Jung Yeon, Yun, Dong-Jin, Jeong, Myoungho, Lee, Hyun Hwi, Cho, Yeonchoo, Lee, Kwang-Hee, Lee, Hyun Jae, Lee, Sangjun, Nam, Kab-Jin, Jung, Dongjin, Kuh, Bong Jin, Ha, Daewon, Kim, Yongsung, Park, Seongjun, Kim, Yunseok, Lee, Eunha, Heo, Jinseong

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Gate oxide effect on wafer level reliability of next generation dram transistors von Yu Gyun Shin, Kab-Jin Nam, Heedon Hwang, Jeong Hee Han, Sangjin Hyun, Siyoung Choi, Joo-Tae Moon

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Leakage current mechanisms in sub-50 nm recess-channel-type DRAM cell transistors with three-terminal gate-controlled diodes von CHUNG, Eun-Ae, KIM, Young-Pil, NAM, Kab-Jin, LEE, Sungsam, MIN, Ji-Young, SHIN, Yu-Gyun, CHOI, Siyoung, JIN, Gyoyoung, MOON, Joo-Tae, KIM, Sangsig

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Investigation of spatial and energetic trap distributions in 1 nm EOT SiO2/HfO2 by discharging-sweep mode amplitude charge pumping von CHUNG, Eun-Ae, NAM, Kab-Jin, KIM, Sangsig, KIM, Young-Pil, MIN, Ji-Young, CHO, Moonju, HONG, Hyungseok, HAN, Jeong, LEE, Jae-Duk, SHIN, Yu-Gyun, CHOI, Siyoung

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Improvement of Performance and Data Retention Characteristics of Sub-50nm DRAM by HfSiON Gate Dielectric von Sangjin Hyun, Hye-Min Kim, Hye-Lan Lee, Kab-Jin Nam, Sug-Hun Hong, Dong-Chan Kim, Jihyun Kim, Soo-Ik Jang, In Sang Jeon, Sangbom Kang, Siyoung Choi, U-In Chung, Joo-Tae Moon, Byung-Il Ryu

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Leakage current mechanisms in sub-50nm recess-channel-type DRAM cell transistors with three-terminal gate-controlled diodes von Chung, Eun-Ae, Kim, Young-Pil, Nam, Kab-Jin, Lee, Sungsam, Min, Ji-Young, Shin, Yu-Gyun, Choi, Siyoung, Jin, Gyoyoung, Moon, Joo-Tae, Kim, Sangsig

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Investigation of spatial and energetic trap distributions in 1 nm EOT SiO 2/HfO 2 by discharging-sweep mode amplitude charge pumping von Chung, Eun-Ae, Nam, Kab-Jin, Kim, Young-Pil, Min, Ji-Young, Cho, Moonju, Hong, Hyungseok, Han, Jeong, Lee, Jae-Duk, Shin, Yu-Gyun, Choi, Siyoung, Kim, Sangsig

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METHOD AND APPARATUS FOR MEASURING SWITCHING CHARGE OF FERROELECTRIC ELEMENT von NAM KAB JIN, CHOI BYOUNG DEOG, KWON KEE WON

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Method of manufacturing semiconductor device von Nam, Kab Jin, Ha, Dae Won, Choi, Do Young, Pok, In Bong, Hasan, Musarrat

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A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE von NAM KAB JIN, POK IN BONG, HA DAE WON, CHOI DO YOUNG, HASAN MUSARRAT

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Novel capacitor technology for high density stand-alone and embedded DRAMs von Yeong Kwan Kim, Seung Hwan Lee, Sung Je Choi, Hong Bae Park, Young Dong Seo, Kwang Hyun Chin, Dongchan Kim, Jae Soon Lim, Wan Don Kim, Kab Jin Nam, Man-Ho Cho, Ki Hyun Hwang, Young Sun Kim, Seok Sik Kim, Young Wook Park, Joo Tae Moon, Sang In Lee, Moon Yong Lee

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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE von HA, Dae Won, POK, In Bong, CHOI, Do Young, HASAN, Musarrat, NAM, Kab Jin

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SEMICONDUCTOR DEVICE von NAKANISHI Toshiro, NAM Kab Jin, ZHANG Lijie

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Ferroelectric memory device von HA YONG-HO, HASAN MUSHARAT, NAM KAB-JIN, KUH BONG-JIN, PARK GUN-JOO

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METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR BY HEAT TREATMENT OF DIELEDTRIC LAYER UNDER HYDROGEN AMBITENT von NAM, KAB-JIN, WON, SEOK-JUN, PARK, YOUNG-WOOK

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DUAL GATE STRUCTURE OF SEMICONDUCTOR DEVICE, AND ITS FORMING METHOD von AKASAKA YASUSHI, LEE MYOUNG-BUM, OTSUKA FUMIO, TAMURA YASUYUKI, NAM KAB-JIN

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Method for manufacturing capacitor of semiconductor device including thermal treatment to dielectric film under hydrogen atmosphere von WON, SEOK-JUN, NAM, KAB-JIN, PARK, YOUNG-WOOK

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Method for manufacturing an electrode of a capacitor von Kim, Jin-won, Nam, Sang-don, Kim, Wan-don, Nam, Kab-jin

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Method for fabricating a semiconductor device using single wafer loading type apparatus adoping lamp heating method von KWAK, SUN-WOO, YOON, DUK-SOO, NAM, KAB-JIN, WON, SEOK-JUN, KIM, KYUNG-HUN, PARK, YOUNG-HUN

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