Quality improvement of 4″ 4H-SiC crystal by using modified seed adhesion method von Park, Jong Hwi, Kyun, Myung Ok, Ku, Kap Ryeol, Kim, Jung Gyu, Seo, Jung Doo, Choi, Jung Woo, Jang, Yeon Suk, Kim, Hwang Ju, Lee, Dong Hoon, Lee, Won Jae

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Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth von Jang, Byung Kyu, Choi, Jeong Min, Kyun, Myung Ok, Ko, Sang Ki, Ku, Kap Ryeol, Kim, Jung Gyu, Seo, Jung Doo, Choi, Jung Woo, Lee, Won Jae

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Temperature Gradient Control with an Air-Pocket Design for Growth of High Quality SiC Crystal von Choi, Jung Woo, Seo, Jung Doo, Ku, Kap Ryeol, Kyun, Myung Ok, Kim, Su Ho, Kim, Jung Gyu, Park, Jong Hwi, Jang, Yeon Suk, Lee, Won Jae, Lee, Seung Jun

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Crystal Separation Method of 6-Inch 4H-SiC Crystal Using Adhesion Shrinkage between a Seed and a Seed Holder in Cooling Process von Jang, Byung Kyu, Park, Jong Hwi, Kim, Dae Sung, Yang, Eunsu, Kyun, Myung Ok, Ko, Sang Ki, Ku, Kap Ryeol, Kim, Jung Gyu, Choi, Jung Woo, Lee, Won Jae

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Modified Hot-Zone Design of Growth Cell for Reducing the Warpage of 6”-SiC Wafer von Jang, Byung Kyu, Park, Jong Hwi, Yang, Eunsu, Kyun, Myung Ok, Ko, Sang Ki, Ku, Kap Ryeol, Kim, Jung Gyu, Jang, Yeon Suk, Choi, Jung Woo, Lee, Won Jae

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Polytype Control by Pretreatment of SiC Source Powder for 4H-SiC Single Crystal Growth von Jang, Byung Kyu, Kyun, Myung Ok, Ko, Sang Ki, Ku, Kap Ryeol, Kim, Jung Gyu, Seo, Jung Doo, Choi, Jung Woo, Lee, Chae Young, Lee, Won Jae

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Resistivity Increase in 6H-SiC Crystal Grown with Simple Modification in PVT Process von Kyun, Myung Ok, Kim, Young Gon, Ku, Kap Ryeol, Kim, Jung Gyu, Choi, Su Hun, Park, Jong Hwi, Seo, Jung Doo, Choi, Jung Woo, Lee, Won Jae

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Formation and Size Control of ZnO Nanowires on Al-Zn-Si-Fe Alloy by Directed Melt Oxidation Process von Lee, Geun-Hyoung, Shin, Byoung-Chul, Kim, Il-Soo, Lee, Won-Jae, Kyun, Myung-Ok, Jeon, Hyoung-Do

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Surface Morphology of AlN Epitaxial Layer Grown on Various SiC Substrates by Sublimation Closed Space Technique von Lee, Gi Sub, Kyun, Myung Ok, Hwang, Hyun Hee, An, Joon Ho, Nishino, Shigehiro, Lee, Won Jae, Shin, Byoung Chul

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An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method von Kim, Jung Gon, Kim, Jung Kyu, Kyun, Myung Ok, Kim, Il Soo, An, Joon Ho, Lee, Won Jae, Shin, Byoung Chul, Seo, Jung Doo, Ku, Kap Ryeol

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SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties von Lee, Gi Sub, Kyun, Myung Ok, Park, Chi Kwon, Nishino, Shigehiro, Lee, Ju Young, Lee, Won Jae, Shin, Byoung Chul

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High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design von Kim, Jung Kyu, Kyun, Myung Ok, Kim, Il Soo, Lee, Geun Hyoung, Lee, Ju Young, Lee, Won Jae, Shin, Byoung Chul, Ku, Kap Ryeol, Seo, Jung Doo

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Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method von Kim, Jung Gon, Kim, Jung Kyu, Kyun, Myung Ok, Kim, Il Soo, An, Joon Ho, Lee, Won Jae, Shin, Byoung Chul, Seo, Jung Doo, Ku, Kap Ryeol

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SILICON CARBIDE POWDER von KYUN, Myung Ok, PARK, Jong Hwi

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SILICON CARBIDE POWDER von KYUN, Myung Ok, PARK, Jong Hwi

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SILICON CARBIDE POWDER AND METHOD FOR MANUFACTURING SILICON CARBIDE INGOT USING THE SAME von KYUN, Myung Ok, PARK, Jong Hwi

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SILICON CARBIDE POWDER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING SILICON CARBIDE INGOT USING THE SAME von KYUN, Myung Ok, PARK, Jong Hwi

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SILICON CARBIDE POWDER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING SILICON CARBIDE INGOT USING THE SAME von KYUN, Myung Ok, PARK, Jong Hwi

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SILICON CARBIDE POWDER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING SILICON CARBIDE INGOT USING THE SAME von KYUN, Myung Ok, PARK, Jong Hwi

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Diisocyanate composition, preparation method thereof and optical material using same von Kim, Jeongmoo, Myung, Jung Hwan, Han, Hyuk Hee, Pai, Jaeyoung, Jung, Jooyoung, Kyun, Myung-Ok

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